Document
FQPF17N08
January 2001
QFET
FQPF17N08
80V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
TM
Features
• • • • • • • 11.2A, 80V, RDS(on) = 0.115Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 28 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
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TO-220F
FQPF Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQPF17N08 80 11.2 7.9 44.8 ± 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
100 11.2 3.0 6.5 30 0.2 -55 to +175 300
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ --Max 5.0 62.5 Units °C/W °C/W
©2000 Fairchild Semiconductor International
Rev. A1, January 2001
FQPF17N08
Electrical Characteristics
Symbol Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 80 V, VGS = 0 V VDS = 64 V, TC = 150°C VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V 80 ------0.08 ------1 10 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 5.6 A VDS = 30 V, ID = 5.6 A
(Note 4)
2.0 ---
-0.088 5.13
4.0 0.115 --
V Ω S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---350 120 28 450 155 35 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 64 V, ID = 16.5 A, VGS = 10 V
(Note 4, 5)
VDD .