400V N-Channel MOSFET
FQPF17N40 — N-Channel QFET® MOSFET
FQPF17N40
N-Channel QFET® MOSFET
400 V, 9.5 A, 270 mΩ
December 2013
Description
Th...
Description
FQPF17N40 — N-Channel QFET® MOSFET
FQPF17N40
N-Channel QFET® MOSFET
400 V, 9.5 A, 270 mΩ
December 2013
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
9.5 A, 400 V, RDS(on) = 270 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A
Low Gate Charge (Typ. 45 nC)
Low Crss (Typ. 30 pF)
100% Avalanche Tested
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GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
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Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds.
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Thermal Characteristics
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Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Juncti...
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