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FQPF27P06 Dataheets PDF



Part Number FQPF27P06
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 60V P-Channel MOSFET
Datasheet FQPF27P06 DatasheetFQPF27P06 Datasheet (PDF)

FQPF27P06 P-Channel MOSFET FQPF27P06 P-Channel QFET® MOSFET -60 V, -17 A, 26 mΩ March 2013 Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC mo.

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FQPF27P06 P-Channel MOSFET FQPF27P06 P-Channel QFET® MOSFET -60 V, -17 A, 26 mΩ March 2013 Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • -17 A, -60 V, RDS(on)=26 mΩ(Max.) @VGS=-10 V, ID=-8.5 A • Low Gate Charge (Typ. 33 nC) • Low Crss (Typ. 120 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating GD S TO-220F G! Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds S ! ● ● ▶▲ ● ! D FQPF27P06 -60 -17 -12 -68 ± 25 560 -17 4.7 -7.0 47 0.31 -55 to +175 300 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ Max -- 3.19 -- 62.5 Unit V A A A V mJ A mJ V/ns W W/°C °C °C Unit °C/W °C/W ©2001 Fairchild Semiconductor Corporation FQPF27P06 Rev. C0 www.fairchildsemi.com FQPF27P06 P-Channel MOSFET Elerical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Unit Off Characteristics BVDSS ∆BVDSS / ∆TJ Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSSF IGSSR Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -60 V, VGS = 0 V VDS = -48 V, TC = 150°C VGS = -25 V, VDS = 0 V VGS = 25 V, VDS = 0 V -60 -- ----- -- -0.06 ----- -- -- -1 -10 -100 100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage Static Drain-Source On-Resistance gFS Forward Transconductance VDS = VGS, ID = -250 µA VGS = -10 V, ID = -8.5 A VDS = -30 V, ID = -8.5 A (Note 4) -2.0 --- 0.055 -- 12 -4.0 0.07 -- V Ω S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 1100 1400 pF -- 510 660 pF -- 120 155 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -30 .


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