Document
FQPF27P06 P-Channel MOSFET
FQPF27P06
P-Channel QFET® MOSFET
-60 V, -17 A, 26 mΩ
March 2013
Description
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Features
• -17 A, -60 V, RDS(on)=26 mΩ(Max.) @VGS=-10 V, ID=-8.5 A • Low Gate Charge (Typ. 33 nC) • Low Crss (Typ. 120 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating
GD S
TO-220F
G!
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
S
!
● ●
▶▲
●
!
D
FQPF27P06 -60 -17 -12 -68 ± 25 560 -17 4.7 -7.0 47 0.31
-55 to +175
300
Thermal Characteristics
Symbol RθJC RθJA
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Typ Max -- 3.19 -- 62.5
Unit V A A A V mJ A mJ
V/ns W
W/°C °C
°C
Unit °C/W °C/W
©2001 Fairchild Semiconductor Corporation FQPF27P06 Rev. C0
www.fairchildsemi.com
FQPF27P06 P-Channel MOSFET
Elerical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Unit
Off Characteristics
BVDSS ∆BVDSS / ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF IGSSR
Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to 25°C
VDS = -60 V, VGS = 0 V VDS = -48 V, TC = 150°C VGS = -25 V, VDS = 0 V VGS = 25 V, VDS = 0 V
-60
--
-----
--
-0.06
-----
--
--
-1 -10 -100 100
V
V/°C
µA µA nA nA
On Characteristics
VGS(th) RDS(on)
Gate Threshold Voltage
Static Drain-Source On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = -250 µA VGS = -10 V, ID = -8.5 A VDS = -30 V, ID = -8.5 A (Note 4)
-2.0 --- 0.055 -- 12
-4.0 0.07
--
V Ω S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V, f = 1.0 MHz
-- 1100 1400 pF -- 510 660 pF -- 120 155 pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = -30 .