Document
FQPF8N60C — N-Channel QFET® MOSFET
FQPF8N60C
N-Channel QFET® MOSFET
600 V, 7.5 A, 1.2 Ω
November 2013
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features
• 7.5 A, 600 V, RDS(on) = 1.2 Ω (Max.) @ VGS = 10 V, ID = 3.75 A
• Low Gate Charge (Typ. 28 nC)
• Low Crss (Typ. 12 pF)
• 100% Avalanche Tested
D
GDS
G
TO-220F
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD
Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol RθJC RθJA
Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max.
S
FQPF8N60C 600 7.5 * 4.6 * 30 * ± 30 230 7.5 14.7 4.5 48 0.38
-55 to +150 300
FQPF8N60C 2.6 62.5
Unit V A A A V mJ A mJ
V/ns W
W/°C °C
°C
Unit °C/W °C/W
©2004 Fairchild Semiconductor Corporation
1
FQPF8N60C Rev. C0
www.fairchildsemi.com
FQPF8N60C — N-Channel QFET® MOSFET
Package Marking and Ordering Information
Part Number FQPF8N60C
Top Mark FQPF8N60C
Package TO-220F
Packing Method Reel Size
Tube
N/A
Tape Width N/A
Quantity 50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
600 --
∆BVDSS Breakdown Voltage Temperature / ∆TJ Coefficient
ID = 250 µA, Referenced to 25°C --
0.7
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
1 10 100 -100
V
V/°C
µA µA nA nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA VGS = 10 V, ID = 3.75 A VDS = 40 V, ID = 3.75 A
2.0 --
4.0
V
-- 1.0 1.2
Ω
-- 8.7
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
-- 965 1255 pF
-- 105 135
pF
--
12
16
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300 V, ID = 7.5 A, RG = 25 Ω
-- 16.5 45
ns
-- 60.5 130
ns
--
81 170
ns
(Note 4)
--
64.5
140
ns
VDS = 480 V, ID = 7.5 A, VGS = 10 V
--
28
36
nC
-- 4.5
--
nC
(Note 4) --
12
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7.5 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 7.5 A, dIF / dt = 100 A/µs
1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 7.3 mH, IAS = 7.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25oC. 3. ISD ≤ 7.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25oC. 4. Essentially independent of operating temperature.
--
--
7.5
A
--
--
30
A
--
--
1.4
V
-- 365
--
ns
-- 3.4
--
µC
©2004 Fairchild Semiconductor Corporation
2
FQPF8N60C Rev. C0
www.fairchildsemi.com
FQPF8N60C — N-Channel QFET® MOSFET
!
ID, Drain Current [A]
Drain-SouRrDcS(eON)O[n-ΩR],esistance
Top : 15V.0GSV
10.0 V
101
8.0 V 7.0 V
6.5 V
6.0 V
5.5 V
Bottom: .0 V
100
10-1 10-1
※ Notes : 1. 250µs PulseTest 2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
3.5
3.0
2.5
VGS = 10V
2.0
1.5
VGS = 20V
1.0 ※ Note : TJ = 25℃
0.5
0
5
10
15
20
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
2000 1800 1600 1400 1200 1000 800 600 400 200
0 10-1
Ciss Coss Crss
CCCirossssss===CCCggdsds++CCggdd(Cds = shorted)
※ Note.