800V N-Channel MOSFET
FQP8N80C / FQPF8N80C / FQPF8N80CYDTU — N-Channel QFET® MOSFET
December 2013
FQP8N80C / FQPF8N80C / FQPF8N80CYDTU
N-Chan...
Description
FQP8N80C / FQPF8N80C / FQPF8N80CYDTU — N-Channel QFET® MOSFET
December 2013
FQP8N80C / FQPF8N80C / FQPF8N80CYDTU
N-Channel QFET® MOSFET
800 V, 8.0 A, 1.55 Ω
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
8.0 A, 800 V, RDS(on) = 1.55 Ω (Max.) @ VGS = 10 V, ID = 4.0 A
Low Gate Charge (Typ. 35 nC)
Low Crss (Typ. 13 pF)
100% Avalanche Tested
D
GDS
TO-220 GDS
D
G
TO-220F
S
G
TO-220F Y-formed
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Conti...
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