Document
FQPF8P10
QFET
FQPF8P10
100V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
TM
Features
• • • • • • • -5.3A, -100V, RDS(on) = 0.53Ω @VGS = -10 V Low gate charge ( typical 12 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
D
G GD S
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQPF8P10 -100 -5.3 -3.8 -21.2 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
150 -5.3 2.8 -6.0 28 0.19 -55 to +175 300
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ --Max 5.36 62.5 Units °C/W °C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
FQPF8P10
Electrical Characteristics
Symbol Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -100 V, VGS = 0 V VDS = -80 V, TC = 150°C VGS = -30 V, VDS = 0 V VGS = 30 V, VDS = 0 V -100 -------0.1 -------1 -10 -100 100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = -250 µA VGS = -10 V, ID = -2.65 A VDS = -40 V, ID = -2.65 A
(Note 4)
-2.0 ---
-0.41 3.9
-4.0 0.53 --
V Ω S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz ---360 120 30 470 155 40 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -80 V, ID = -8.0 A, VGS = -10 V
(Note 4, 5)
VDD = -50 V, ID = -8.0 A, RG = 25 Ω
(Note 4, 5)
--------
11 110 20 35 12 3.0 6.4
30 230 50 80 15 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -5.3 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -8.0 A, dIF / dt = 100 A/µs
(Note 4)
------
---98 0.35
-5.3 -21.2 -4.0 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 8.0mH, IAS = -5.3A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -8.0A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
FQPF8P10
Typical Characteristics
10
1
10
0
-I D , Drain Current [A]
-ID, Drain Current [A]
VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -5.5 V -5.0 V Bottom : -4.5 V Top :
10
1
175℃
10
0
25℃ -55℃
※ Notes : 1. VDS = -40V 2. 250μ s Pulse Test
10
-1
※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃
10
-2
10
-1
-1
10
10
0
10
1
2
4
6
8
10
-VDS, Drain-Source Voltage [V]
-VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.5
10
1
RDS(on) [ Ω ], Drain-Source On-Resistance
1.2
VGS = - 10V
0.9
VGS = - 20V
-I DR , Reverse Drain Current [A]
0.6
10
0
175℃
25℃
※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test
0.3
※ Note : TJ = 25℃
0.0 0 5 10 15 20 25
10
-1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
900 800
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
Coss
700 600
10
VDS = -20V VDS = -50V
-V GS , Gate-Source.