FQS4410

FQS4410 May 2000 QFET FQS4410 Single N-Channel, Logic Level, Power MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as DC/DC converters, high efficiency switching for power management in portable and battery operated products. TM Features 10A, 30V, RDS(on) = 0.0135Ω @VGS = 10 V Low gate charge ( typical 21 nC) Low Crss ( typical 145 pF) Fast switching Improved dv/dt capability 175°C maximum junction temperature rating 8 7 6 5 4 3 2 1 Absolute Maximum Ratings Symbol VDSS ID IDM VGSS dv/dt PD TJ, TSTG TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 70°C) Drain Current - Pulsed (Note 1) FQS4410 30 10 8 50 ± 20 7.0 2.5 0.02 -55 to +175 Units V A A A V V/ns W W/°C °C Gate-Source Voltage Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) Linear Derating Factor Operating and Storage Temperature Range (Note 3) Thermal Characteristics Symbol RθJA Parameter Thermal Resistance, Junction-to-Ambient Typ -Max 50 Units °C/W ©2000 Fairchild Semiconductor International Rev. A, May 2000 FQS4410 Electrical Characte...