FQU13N10L

FQD13N10L / FQU13N10L December 2000 QFET FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control. TM Features 10A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 8.7 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD13N10L / FQU13N10L 100 10 6.3 40 ± 20 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 95 10 4.0 6.0 2.5 40 0.32 -55 to +150 300 TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range...