FQD19N10 / FQU19N10
August 2000
QFET
FQD19N10 / FQU19N10
100V N-Channel MOSFET
General Description
These N-Channel enh...
FQD19N10 / FQU19N10
August 2000
QFET
FQD19N10 / FQU19N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
TM
Features
15.6A, 100V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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D-PAK
FQD Series
I-PAK
G D S
FQU Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQD19N10 / FQU19N10 100 15.6 9.8 62.4 ± 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
220 15.6 5.0 6.0 2.5 50 0.4 -55 to +150 300
TJ, TSTG TL
- Derate above 25°C Operating and Storage Tem...