FQD1N50B / FQU1N50B
May 2000
QFET
FQD1N50B / FQU1N50B
500V N-Channel MOSFET
General Description
These N-Channel enhanc...
FQD1N50B / FQU1N50B
May 2000
QFET
FQD1N50B / FQU1N50B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
TM
Features
1.1A, 500V, RDS(on) = 9.0Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 3.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability
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D-PAK
FQD Series
I-PAK
G D S
FQU Series
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S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQD1N50 / FQU1N50 500 1.1 0.7 4.4 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
80 1.1 2.5 4.5 2.5 25 0.2 -55 to +150 300
TJ, TSTG TL
- Derate above 25°C Operating and Storage Temperature Ra...