FQD30N06 / FQU30N06
FQD30N06 / FQU30N06
60V N-Channel MOSFET
January 2009
QFET®
General Description
These N-Channel e...
FQD30N06 / FQU30N06
FQD30N06 / FQU30N06
60V N-Channel MOSFET
January 2009
QFET®
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
Features
22.7A, 60V, RDS(on) = 0.045Ω @ VGS = 10V Low gate charge ( typical 19 nC) Low Crss ( typical 40 pF) Fast switching 100% avalanche tested Improved dv/dt capability 150oC maximum junction temperature rating RoHS Compliant
DD
!
GS
D-PAK
FQD Series
GDS
I-PAK
FQU Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature f...