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FQU4P25 Dataheets PDF



Part Number FQU4P25
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 250V P-Channel MOSFET
Datasheet FQU4P25 DatasheetFQU4P25 Datasheet (PDF)

FQD4P25 / FQU4P25 December 2000 QFET FQD4P25 / FQU4P25 250V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC .

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FQD4P25 / FQU4P25 December 2000 QFET FQD4P25 / FQU4P25 250V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters. TM Features • • • • • • -3.1A, -250V, RDS(on) = 2.1Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 10.3 pF) Fast switching 100% avalanche tested Improved dv/dt capability S D G! ! ● ● ▶ ▲ ● G S D-PAK FQD Series I-PAK G D S FQU Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQD4P25 / FQU4P25 -250 -3.1 -1.96 -12.4 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 280 -3.1 4.5 -5.5 2.5 45 0.36 -55 to +150 300 TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 2.78 50 110 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor International Rev. A2, December 2000 FQD4P25 / FQU4P25 Electrical Characteristics Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS / ∆TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -250 V, VGS = 0 V VDS = -200 V, TC = 125°C VGS = -30 V, VDS = 0 V VGS = 30 V, VDS = 0 V -250 -------0.21 -------1 -10 -100 100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = -250 µA VGS = -10 V, ID = -1.55 A VDS = -40 V, ID = -1.55 A (Note 4) -3.0 --- -1.63 2.0 -5.0 2.1 -- V Ω S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz ---325 65 10 420 85 13 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -125 V, ID = -4.0 A, RG = 25 Ω (Note 4, 5) -------- 9.5 60 14 27 10.3 2.7 5.2 30 130 40 65 14 --- ns ns ns ns nC nC nC VDS = -200 V, ID = -4.0 A, VGS = -10 V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -3.1 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -4.0 A, dIF / dt = 100 A/µs (Note 4) ------ ---140 0.64 -3.1 -12.4 -5.0 --- A A V ns µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 46.6mH, IAS = -3.1A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -4.0A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2000 Fairchild Semiconductor International Rev. A2, December 2000 FQD4P25 / FQU4P25 Typical Characteristics 10 1 -I D, Drain Current [A] 10 0 -I D , Drain Current [A] VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V Top : 10 1 10 0 150℃ 10 -1 25℃ -55℃ -1 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = -50V 2. 250μ s Pulse Test 10 -2 10 -1 10 0 10 1 10 2 4 6 8 10 -VDS, Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 8 10 1 RDS(on) [ Ω ], Drain-Source On-Resistance VGS = - 10V VGS = - 20V 4 -I DR , Reverse Drain Current [A] 6 10 0 2 ※ Note : TJ = 25℃ 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 0 0 3 6 9 12 10 -1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -ID , Drain Current [A] -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 700 .


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