FQD5P10 / FQU5P10
FQD5P10 / FQU5P10
100V P-Channel MOSFET
October 2008
QFET®
General Description
These P-Channel enha...
FQD5P10 / FQU5P10
FQD5P10 / FQU5P10
100V P-Channel MOSFET
October 2008
QFET®
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
Features
-3.6A, -100V, RDS(on) = 1.05Ω @VGS = -10 V Low gate charge ( typical 6.3 nC) Low Crss ( typical 18 pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS Compliant
D D
GS
D-PAK
FQD Series
GDS
I-PAK
FQU Series
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
FQD5P10 / FQU5P10 -100 -3.6 -...