EC2612
40GHz Super Low Noise PHEMT
Pseudomorphic High Electron Mobility Transistor Description
The EC2612 is based on a ...
EC2612
40GHz Super Low Noise PHEMT
Pseudomorphic High Electron Mobility
Transistor Description
The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility
transistor (0.15µm PHEMT) technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low resistance and excellent reliability. The device shows a very high transconductance which leads to very high frequency and low noise performances. It is available in chip form with sources via holes connection.Only gate and drain wires bounding are required. ¦ Chip size : 0.63 x 0.37 x 0.1 mm
Main Features
¦ 0.8dB minimum noise figure @ 18GHz ¦ 1.5dB minimum noise figure @ 40GHz ¦ 12dB associated gain @ 18GHz ¦ 9.5dB associated gain @ 40GHz D: Drain G: Gate S: Source
Main Characteristics
Tamb = +25°C Symbol Idss NFmin Ga Parameter Saturated drain current Minimum noise figure (F=40GHz) Associated gain (F=40GHz) 8 Min 10 Typ 40 1.5 9.5 Max 60 1.9 Unit mA dB dB
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Electrical Characteristics
Tamb = +25°C
Ref. : DSEC26120077 -17-Marc-00 1/8 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
EC2612
Symbol Idss Parameter Saturated drain current
40GHz Super Low Noise PHEMT
Test Conditions Vds = 2V Vgs = 0V Vds = 2V Ids = 0.1mA Vds = 2V Ids = 25mA Vgsd = -2V Min 10 Typ...