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EC3201C Dataheets PDF



Part Number EC3201C
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description Low-Frequency General-Purpose Amplifier Applications
Datasheet EC3201C DatasheetEC3201C Datasheet (PDF)

Ordering number : ENN6963A EC3101C / EC3201C PNP / NPN Epitaxial Planar Silicon Transistors EC3101C / EC3201C Features • Low-Frequency General-Purpose Amplifier Applications Ultraminiature package facilitates miniaturization in end products. Specifications ( ) : EC3101C Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperatur.

  EC3201C   EC3201C



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Ordering number : ENN6963A EC3101C / EC3201C PNP / NPN Epitaxial Planar Silicon Transistors EC3101C / EC3201C Features • Low-Frequency General-Purpose Amplifier Applications Ultraminiature package facilitates miniaturization in end products. Specifications ( ) : EC3101C Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Ratings (--)55 (--)50 (--)6 (--)150 (--)300 (--)30 150 150 --55 to +150 Unit V V V mA mA mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Conditions VCB=(--)35V, IE=0 VEB=(-)4V, IC=0 VCE=(--)6V, IC=(--)1mA VCE=(--)6V, IC=(--)10mA VCB=(--)6V, f=1MHz IC=(--)50mA, IB=(--)5mA IC=(--)50mA, IB=(--)5mA IC=(--)10µA, IE=0 IC=(--)1mA, RBE=∞ IE=(--)10µA, IC=0 (-)55 (-)50 (--)6 200 (180)200 (2.9)1.7 (--0.12)0.08 (--)0.8 (--)0.4 (--)1.0 Ratings min typ max (--)0.1 (--)0.1 600 MHz pF V V V V V Unit µA µA Marking EC3101C : G EC3201C : H Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 42004 TS IM TB-00000112 / 92001 TS IM TA-2712 No.6963-1/4 EC3101C / EC3201C Package Dimensions unit : mm 2184A Bottom View 0.8 0.5 Electrical Connection (Top view) Polarity mark Type No. Base Top View Collector 0.05 0.3 0.2 0.05 0.2 Marking Emitter Collector *Electrodes : on the bottom Polarity mark 1 0.05 2 0.6 1.0 2 1 4 3 3 0.3 0.05 4 1 : Base 2 : Emitter 3 : Collector 4 : Collector SANYO : ECSP1008-4 0.6 Base Emitter Collector --50 IC -- VCE EC3101C µA 50 --4 µA 00 --4 --5 µA 00 Collector Current, IC -- mA --3 50 --200µA --150µA --100µA --50µA Collector Current, IC -- m.


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