EC3H01B

Ordering number : ENN6573 EC3H01B NPN Epitaxial Planar Silicon Transistor EC3H01B VHF Band Low-Noise Amplifer and OSC Applications Features Package Dimensions unit : mm 2183 0.35 0.2 0.15 0.05 1 Low noise : NF=1.8dB typ (f=150MHz). High gain : S21e2=16dB typ (f=150MHz). Ultraminiature (1006 size) and thin (0.5mm) leadless package. [EC3H01B] 0.15 0.25 2 0.05 1.0 0.65 0.4 3 0.5 0.25 0.05 0.05 (Bottom View) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 1 : Base 2 : Emitter 3 : Collector SANYO : E-CSP1006-3 Ratings 20 12 2 50 100 150 --55 to +150 Unit V V V mA mW °C °C 0.6 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE1 hFE2 fT1 fT2 Cob Cre S21e2 NF VCB=10V, IE=0 VEB=1V, IC=0 VCE=2V, IC=3mA VCE=2V, I C=50mA VCE=2V, IC=3mA VCE=2V, I C=20mA VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=2V, IC=3mA, f=150MHz VCE=2V, IC=3mA, f=150MHz 13 100 70 1.0 1.7 5.0 1.1 0.8 16 1.8 3.0 1.8 GHz GHz pF pF dB dB Conditions Ratings min typ max 1.0 10 180 Unit µA µA Any and all SANYO products described or contained herein do not have specifications that can handle applications...