EC3H04C

Ordering number : ENN6580 EC3H04C NPN Epitaxial Planar Silicon Transistor EC3H04C High-Frequency Low-Noise Amplifier and OSC Applications Features Package Dimensions unit : mm 2184 [EC3H04C] 0.5 0.3 0.05 0.6 Low noise : NF=1.7dB typ (f=2GHz). Hige cut-off frequency : fT=8GHz typ (VCE=1V). Low operating voltage. Ultraminiature (1008 size) and thin (0.6mm) leadless package. 0.2 0.05 0.2 3 0.05 4 1.0 2 1 0.3 (Bottom View) 0.05 1 : Base 2 : Emitter 3 : Collector 4 : Collector SANYO : E-CSP1008-4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 0.8 0.6 Ratings 9 6 2 100 100 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT Cob Cre S21e21 S21e22 NF VCB=5V, IE=0 VEB=1V, IC=0 VCE=1V, I C=10mA VCE=1V, I C=10mA VCB=1V, f=1MHz VCB=1V, f=1MHz VCE=1V, IC=10mA, f=2GHz VCE=3V, IC=20mA, f=1GHz VCE=1V, IC=10mA, f=2GHz 4 100 6 8 1.1 0.85 5 12 1.7 2.5 1.5 Conditions Ratings min typ max 1.0 10 180 GHz pF pF dB dB dB Unit µA µA Any and all SANYO products described or contained herein do not have specifications that can han...