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EC3H05B Dataheets PDF



Part Number EC3H05B
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description VHF to UHF Wide-Band Low-Noise Amplifier Applications
Datasheet EC3H05B DatasheetEC3H05B Datasheet (PDF)

Ordering number : ENN6574 EC3H05B NPN Epitaxial Planar Type Silicon Transistor EC3H05B VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Package Dimensions unit : mm 2183 0.35 0.2 0.15 0.05 1 0.4 0.25 Low noise : NF=1.2dB typ (f=1GHz). High gain : S21e2=13dB typ (f=1GHz). Hige cutoff frequency : fT=9.0GHz typ. Ultraminiature (1006 size) and thin (0.5mm) leadless package. [EC3H05B] 0.15 2 0.05 1.0 0.65 3 0.5 0.25 0.05 0.05 (Bottom View) 1 : Base 2 : Emitter 3 :.

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Ordering number : ENN6574 EC3H05B NPN Epitaxial Planar Type Silicon Transistor EC3H05B VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Package Dimensions unit : mm 2183 0.35 0.2 0.15 0.05 1 0.4 0.25 Low noise : NF=1.2dB typ (f=1GHz). High gain : S21e2=13dB typ (f=1GHz). Hige cutoff frequency : fT=9.0GHz typ. Ultraminiature (1006 size) and thin (0.5mm) leadless package. [EC3H05B] 0.15 2 0.05 1.0 0.65 3 0.5 0.25 0.05 0.05 (Bottom View) 1 : Base 2 : Emitter 3 : Collector SANYO : E-CSP1006-3 0.6 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 16 8 1.5 50 100 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Output Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT Cob S21e2 NF Conditions VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=15mA VCE=5V, IC=15mA VCB=10V, f=1MHz VCE=5V, IC=15mA, f=1GHz VCE=5V, IC=5mA, f=1GHz 10 Ratings min typ max 1.0 10 100 9.0 0.55 13 1.2 2.5 1.2 180 GHz pF dB dB Unit µA µA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71400 TS IM TA-2477 No.6574-1/5 0.5 EC3H05B Type No. Indication (Top view) Electrical Connection (Top view) Polarity mark (Top) Base Collector Emitter *Electrodes : on the bottom E This product adopts a high-frequency process. Please be careful when handling it beause it is susceptible to static electricity. Polarity mark (Top) Collector Base Emitter 3 2 hFE -- IC VCE=5V Gain-Bandwidth Product, f T -- GHz 2 f T -- IC VCE=5V 10 7 5 DC Current Gain, hFE 100 7 5 3 2 3 2 10 7 5 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT01370 1.0 7 5 7 1.0 2 3 5 7 10 2 3 5 7 Collector Current, IC -- mA 5 3 Collector Current, IC -- mA 5 IT01371 Cob -- VCB Reverse Transfer Capacitance, Cre -- pF Cre -- VCB f=1MHz Output Capacitance, Cob -- pF f=1MHz 3 2 2 1.0 7 5 3 2 1.0 7 5 3 2 0.1 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 0.1 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 16 2 Forward Transfer Gain, S21e -- dB S21e2 -- IC IT01372 10 Collector-to-Base Voltage, VCB -- V IT01373 NF -- IC VCE=5V f=1GHz 14 12 10 8 6 4 2 0 5 VCE=5V f=1GHz Noise Figure, NF -- dB 8 6 4 2 0 7 1.0 2 3 5 7 10 2 3 5 7 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA IT01374 Collector Current, IC -- mA IT01375 No.6574-2/5 EC3H05B 120 PC -- Ta Collector Dissipation, PC -- mW 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT01376 S Parameters (Common emitter) VCE=1V, IC=1mA, ZO=50Ω Freq(MHz) S11 100 200 400 600 800 1000 1200 1400 1600 1800 2000 0.964 0.944 0.886 0.819 0.766 0.737 0.701 0.681 0.672 0.663 0.653 ∠S11 --14.7 --28.5 --54.5 --76.8 --94.6 --108.1 --120.2 --129.2 --136.9 --144.5 --150.6 S21 3.332 3.286 2.977 2.529 2.223 2.010 1.742 1.593 1.474 1.337 1.234 ∠S21 168.4 157.5 138.4 122.1 109.1 98.2 89.2 81.6 74.1 67.3 61.6 S12 0.039 0.075 0.132 0.168 0.190 0.200 0.206 0.204 0.203 0.198 0.193 ∠S12 80.6 71.2 55.9 44.4 35.9 29.6 24.8 21.3 19.3 18.3 17.9 S22 0.987 0.960 0.879 0.789 0.714 0.663 0.620 0.591 0.577 0.567 0.560 ∠S22 --7.4 -14.4 -26.3 -35.6 -42.2 -47.1 -51.7 -54.9 -58.5 -62.2 -65.5 VCE=1V, IC=3mA, ZO=50Ω Freq(MHz) S11 100 200 400 600 800 1000 1200 1400 1600 1800 2000 0.908 0.849 0.745 0.673 0.625 0.586 0.581 0.573 0.566 0.555 0.546 ∠S11 --23.1 --46.3 --81.4 --104.6 --122.4 --137.2 --143.8 --149.7 --155.6 --161.3 --167.2 S21 8.754 7.966 6.727 5.005 3.985 3.419 2.929 2.561 2.250 2.024 1.856 ∠S21 162.7 147.9 123.5 110.1 99.4 90.7 83.9 78.1 72.9 68.1 63.3 S12 0.038 0.068 0.106 0.120 0.126 0.136 0.142 0.151 0.152 0.154 0.161 ∠S12 76.1 63.6 48.5 40.6 37.2 34.7 34.4 33.5 36.3 38.3 41.9 S22 0.955 0.864 0.693 0.541 0.439 0.409 0.377 0.371 0.338 0.322 0.300 ∠S22 -14.7 -28.1 -44.0 -55.0 -62.2 -64.8 -67.5 -69.0 -72.9 -76.4 -79.5 VCE=1V, IC=10mA, ZO=50Ω .


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