Document
Ordering number : ENN6574
EC3H05B
NPN Epitaxial Planar Type Silicon Transistor
EC3H05B
VHF to UHF Wide-Band Low-Noise Amplifier Applications
Features
• • • •
Package Dimensions
unit : mm 2183
0.35 0.2 0.15 0.05 1 0.4 0.25
Low noise : NF=1.2dB typ (f=1GHz). High gain : S21e2=13dB typ (f=1GHz). Hige cutoff frequency : fT=9.0GHz typ. Ultraminiature (1006 size) and thin (0.5mm) leadless package.
[EC3H05B]
0.15
2
0.05 1.0
0.65
3 0.5
0.25
0.05
0.05
(Bottom View)
1 : Base 2 : Emitter 3 : Collector SANYO : E-CSP1006-3
0.6
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 16 8 1.5 50 100 150 --55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Output Capacitance Forward Transfer Gain Noise Figure Symbol ICBO IEBO hFE fT Cob S21e2 NF Conditions VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=15mA VCE=5V, IC=15mA VCB=10V, f=1MHz VCE=5V, IC=15mA, f=1GHz VCE=5V, IC=5mA, f=1GHz 10 Ratings min typ max 1.0 10 100 9.0 0.55 13 1.2 2.5 1.2 180 GHz pF dB dB Unit µA µA
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71400 TS IM TA-2477 No.6574-1/5
0.5
EC3H05B Type No. Indication (Top view) Electrical Connection (Top view)
Polarity mark (Top) Base Collector Emitter *Electrodes : on the bottom
E
This product adopts a high-frequency process. Please be careful when handling it beause it is susceptible to static electricity.
Polarity mark (Top) Collector Base Emitter
3 2
hFE -- IC
VCE=5V
Gain-Bandwidth Product, f T -- GHz
2
f T -- IC
VCE=5V
10 7 5
DC Current Gain, hFE
100 7 5 3 2
3 2
10 7 5 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT01370
1.0 7 5 7 1.0 2 3 5 7 10 2 3 5 7
Collector Current, IC -- mA
5 3
Collector Current, IC -- mA
5
IT01371
Cob -- VCB
Reverse Transfer Capacitance, Cre -- pF
Cre -- VCB
f=1MHz
Output Capacitance, Cob -- pF
f=1MHz
3 2
2
1.0 7 5 3 2
1.0 7 5 3 2
0.1 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
0.1 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3
Collector-to-Base Voltage, VCB -- V
16
2 Forward Transfer Gain, S21e -- dB
S21e2 -- IC
IT01372 10
Collector-to-Base Voltage, VCB -- V
IT01373
NF -- IC
VCE=5V f=1GHz
14 12 10 8 6 4 2 0 5
VCE=5V f=1GHz
Noise Figure, NF -- dB
8
6
4
2
0 7 1.0 2 3 5 7 10 2 3 5 7 7 1.0 2 3 5 7 10 2 3 5
Collector Current, IC -- mA
IT01374
Collector Current, IC -- mA
IT01375
No.6574-2/5
EC3H05B
120
PC -- Ta
Collector Dissipation, PC -- mW
100
80
60
40
20
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT01376
S Parameters (Common emitter)
VCE=1V, IC=1mA, ZO=50Ω Freq(MHz) S11 100 200 400 600 800 1000 1200 1400 1600 1800 2000 0.964 0.944 0.886 0.819 0.766 0.737 0.701 0.681 0.672 0.663 0.653 ∠S11 --14.7 --28.5 --54.5 --76.8 --94.6 --108.1 --120.2 --129.2 --136.9 --144.5 --150.6 S21 3.332 3.286 2.977 2.529 2.223 2.010 1.742 1.593 1.474 1.337 1.234 ∠S21 168.4 157.5 138.4 122.1 109.1 98.2 89.2 81.6 74.1 67.3 61.6 S12 0.039 0.075 0.132 0.168 0.190 0.200 0.206 0.204 0.203 0.198 0.193 ∠S12 80.6 71.2 55.9 44.4 35.9 29.6 24.8 21.3 19.3 18.3 17.9 S22 0.987 0.960 0.879 0.789 0.714 0.663 0.620 0.591 0.577 0.567 0.560 ∠S22 --7.4 -14.4 -26.3 -35.6 -42.2 -47.1 -51.7 -54.9 -58.5 -62.2 -65.5
VCE=1V, IC=3mA, ZO=50Ω Freq(MHz) S11 100 200 400 600 800 1000 1200 1400 1600 1800 2000 0.908 0.849 0.745 0.673 0.625 0.586 0.581 0.573 0.566 0.555 0.546
∠S11 --23.1 --46.3 --81.4 --104.6 --122.4 --137.2 --143.8 --149.7 --155.6 --161.3 --167.2
S21 8.754 7.966 6.727 5.005 3.985 3.419 2.929 2.561 2.250 2.024 1.856
∠S21 162.7 147.9 123.5 110.1 99.4 90.7 83.9 78.1 72.9 68.1 63.3
S12 0.038 0.068 0.106 0.120 0.126 0.136 0.142 0.151 0.152 0.154 0.161
∠S12 76.1 63.6 48.5 40.6 37.2 34.7 34.4 33.5 36.3 38.3 41.9
S22 0.955 0.864 0.693 0.541 0.439 0.409 0.377 0.371 0.338 0.322 0.300
∠S22 -14.7 -28.1 -44.0 -55.0 -62.2 -64.8 -67.5 -69.0 -72.9 -76.4 -79.5
VCE=1V, IC=10mA, ZO=50Ω .