Document
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
ED1702 NPN general purpose transistor
Product specification Supersedes data of 1997 May 27 1999 Apr 27
Philips Semiconductors
Product specification
NPN general purpose transistor
FEATURES • Low current (max. 500 mA) • Low voltage (max. 25 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complement: ED1802.
1 handbook, halfpage
ED1702
PINNING PIN 1 2 3 emitter base collector DESCRIPTION
2 3
3 2 1
MAM182
Fig.1
Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. 30 25 5 500 1 200 625 +150 150 +150 V V V mA A mA mW °C °C °C UNIT
1999 Apr 27
2
Philips Semiconductors
Product specification
NPN general purpose transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE hFE PARAMETER collector cut-off current emitter cut-off current DC current gain DC current gain ED1702L ED1702M ED1702N ED1702O ED1702P VCEsat Cc fT Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. collector-emitter saturation voltage collector capacitance transition frequency IC = 500 mA; IB = 50 mA; note 1 IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz CONDITIONS IE = 0; VCB = 20 V IE = 0; VCB = 20 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 500 mA; VCE = 1 V IC = 100 mA; VCE = 1 V IC = 100 mA; VCE = 1 V 132 170 213 263 333 − − 80 − − − 40 132 MIN. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 200
ED1702
UNIT K/W
MAX. 100 5 500 − 476 189 233 300 370 476 700 6 −
UNIT nA µA nA
mV pF MHz
1999 Apr 27
3
Philips Semiconductors
Product specification
NPN general purpose transistor
PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads
ED1702
SOT54
c
E d A L b
1
D
2
e1 e
3
b1
L1
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5
Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28
1999 Apr 27
4
Philips Semiconductors
Product specification
NPN general purpose transistor
DEFINITIONS Data Sheet Status Objective specification.