AWT6134M7P8

AWT6134 KPCS/CDMA 3.4V/28dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES InGaP HBT Technology High Efficiency: 39% Low Quiescent Current: 48 mA Low Leakage Current in Shutdown Mode: <1 µA VREF = +2.8 V (+2.7 V min over temp) Optimized for a 50 Ω System Low Profile Miniature Surface Mount Package: 1.56mm Max CDMA 1XRTT Compliant CDMA 1xEV-DO Compliant APPLICATIONS Korean PCS CDMA Wireless Handsets M7 Package 10 Pin 4mm x 4mm Surface Mount Module PRODUCT DESCRIPTION The AWT6134 meets the increasing demands for higher efficiency and linearity in CDMA 1XRTT handsets. The PA module is optimized for VREF = +2.8 V, a requirement for compatibility with the Qualcomm 6000 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The self-contained 4mm x 4mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system. GND at slug (pad) VCC RFIN GND 1 2 3 Bias Control 10 VCC 9 8 7 6 GND RFOUT GND GND VMODE 4 VREF 5 Figure 1: Block Diagram 07/2003 AWT6134 GND VCC RFIN GND VMODE VREF 1 2 3 4 5 GND 10 VCC 9 8 7 6 GND RFOUT GND GND Figure 2: Pinout (X-ray Top View) Table 1: Pin Description PIN 1 2 3 4 5 6 7 8...