BA277

DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BA277 Band-switching diode Product specification 1998 May 06 Philips Semiconductors Product specification Band-switching diode FEATURES Small plastic SMD package Continuous reverse voltage: max. 35 V Continuous forward current: max. 100 mA Low diode capacitance: max. 1.2 pF Low diode forward resistance: max. 0.7 Ω. APPLICATIONS Low loss band switching in VHF television tuners. Surface mount band-switching circuits. DESCRIPTION Planar high performance band-switching diode in a small plastic SOD523 (SC-79) SMD package. PINNING BA277 handbook, halfpage Marking code: 1. 
1 2 1 Top view PIN DESCRIPTION cathode anode 2 MAM399 Fig.1 Simplified outline (SOD523; SC-79) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Ptot Tstg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature Ts = 90 °C CONDITIONS MIN. − − − −65 −65 MAX. 35 100 715 +150 +150 V mA mW °C °C UNIT ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR Cd rD Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering-point VALUE 85 UNIT K/W PARAMETER forward voltage reverse current diode capacitance diode forward resistance IF = 10 mA VR = 25 V VR = 20 V; Tamb = 75 °C f = 1 MHz; VR = 6 V; note ...