BA423AL

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D121 BA423AL AM band-switching diode Product specification Supersedes data of April 1992 1996 Mar 13 Philips Semiconductors Product specification AM band-switching diode FEATURES Continuous reverse voltage: max. 20 V Continuous forward current: max. 50 mA Low diode capacitance: max. 2.5 pF Low diode forward resistance: max. 1.2 Ω. APPLICATION Band switching in AM radio receivers. handbook, 4 columns BA423AL DESCRIPTION Leadless diode in a hermetically-sealed glass SOD80C SMD package with lead/tin plated metal discs at each end. k a MAM061 Fig.1 Simplified outline (SOD80C) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature junction temperature PARAMETER MIN. − − −65 − MAX. 20 50 +150 150 V mA °C °C UNIT ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current see Fig.3 VR = 20V VR = 20 V; Tj = 125 °C Cd rD diode capacitance diode forward resistance f = 1 MHz; VR = 3 V; see Fig.4 IF = 10 mA; f = 1 MHz; see Fig.5 100 5 2.5 1.2 nA µA pF Ω CONDITIONS IF = 50 mA; see Fig.2 MAX. 0.9 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE ...