Document
Silicon RF Switching Diode
q
BA 582
For low-loss VHF band switching in TV/VTR tuners
Type BA 582
Marking blue S
Ordering Code Pin Configuration Q62702-A829
Package1) SOD-123
Maximum Ratings Parameter Reverse voltage Forward current, TA ≤ 60 ˚C Operation temperature range Storage temperature range Thermal Resistance Junction - ambient Rth JA
≤
Symbol VR IF Top Tstg
Values 35 100 – 55 … + 150
Unit V mA
– 55 … + 125 ˚C
600
K/W
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
07.94
BA 582
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Forward voltage IF = 100 mA Reverse current VR = 20 V Diode capacitance f = 1 MHz VR = 1 V VR = 3 V Forward resistance f = 100 MHz IF = 3 mA IF = 10 mA Reverse resistance VR = 1 V, f = 100 MHz Series inductance Symbol min. VF IR CT – 0.6 rf – – 1/gp LS – – 0.45 0.38 100 2.8 0.7 0.5 – – kΩ nH 0.92 0.85 1.4 1.1 Ω – – Values typ. – – max. 1 20 V nA pF Unit
Diode capacitance CT = f (VR) f = 1 MHz
Forward resistance rf = f (IF) f = 100 MHz
Semiconductor Group
2
.