Document
BA 597
Silicon PIN Diode
Preliminary Data
q q
BA 597
RF switch, RF attenuator for frequencies above 10 MHz Very low IM distortion
Type
Ordering Code (taped) UPON INQUIRY
Pin Configuration Marking 1 2 C A yellow/R
Package
BA 597
SOD-323
Maximum Ratings Parameter Reverse voltage Forward current Total power dissipation TS ≤ 40 °C1) Junction temperature Storage temperature range Symbol Values 50 100 250 150 – 55 … + 150 Unit V mA mW °C °C
VR IF Ptot Tj Tstg
1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 10.94
BA 597
Characteristics per Diode at TA = 25 °C, unless otherwise specified. Parameter Symbol min. Reverse current VR = 30 V Forward voltage IF = 100 mA Diode capacitance VR = 10 V, f = 1 MHz VR = 0 V, f = 100 MHz Forward resistance IF = 1.5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz Charge carrier lifetime Value typ. – 0.9 0.52 0.27 22 4.2 2.5 max. nA – 20 V – – pF – – – – Ω – – τL – – – – µs Unit
IR VF CT
rf
IF = 10 mA, IR = 6 mA, IR = 3 mA
Semiconductor Group
2
BA 597
Diode capacitance CT = f (VR) f = 1 MHz, 100 MHz
Forward resistance rt = (IF), f = 100 MHz
3rd Harmonic intercept point vs forward current f = 100 MHz
Semiconductor Group
3
.