BA683

DISCRETE SEMICONDUCTORS DATA SHEET , halfpage M3D121 BA682; BA683 Band-switching diodes Product specification Supersedes data of April 1992 1996 Mar 13 Philips Semiconductors Product specification Band-switching diodes FEATURES Continuous reverse voltage: max. 35 V Continuous forward current: max. 100 mA Low diode capacitance: max. 1.5 pF Low diode forward resistance: max. 0.7 to 1.2 Ω. MAM061 BA682; BA683 DESCRIPTION Planar high performance band-switching diodes in a glass SOD80 SMD package. handbook, 4 columns k a APPLICATION Band-switching in VHF television tuners. Fig.1 Simplified outline (SOD80) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature junction temperature PARAMETER MIN. − − −65 − MAX. 35 100 +150 150 V mA °C °C UNIT ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current see Fig.3 VR = 20V VR = 20 V; Tj = 75 °C Cd Cd diode capacitance diode capacitance BA682 BA683 rD diode forward resistance BA682 BA683 rD diode forward resistance BA682 BA683 IF = 10 mA; f = 200 MHz; see Fig.5 0.5 0.9 Ω Ω IF = 3 mA; f = 200 MHz; see Fig.5 0.7 1.2 Ω Ω f = 1 MHz; VR = 1 V; see Fig.4 f = 1 MHz; VR = 3 V; see Fig.4 1.25 1.20 pF pF 50 1 1.5 nA µA pF CONDITIONS IF = 100 mA; see Fig.2 MAX. 1.0 V UNIT 1996 Mar 13 2 Philips Semiconductors Product specification Ban...