Document
BA682, BA683
SILICON EPITAXIAL PLANAR DIODE SWITCHES
In MiniMELF case especially suited for automatic insertion for electronic band-switching in radio and TV tuners in the frequency range of 50 to 1000 MHz .The dynamic forward resistance is constant and very small over a wide range of frequency and forward current. The reverse capacitance is also small and largely independent of the reverse voltage.
These diodes are delivered taped. Details see “Taping”.
Absolute Maximum Ratings (T a = 25oC)
Reverse Voltage Forward Current at Tamb = 25oC Junction Temperature Storage Temperature Range
Symbol VR IF Tj TS
Value 35 100 150
-55 to +150
Unit V mA OC OC
Characteristics at T j = 25oC
Forward Voltage at IF = 100mA Leakage Current at VR = 20V Dynamic Forward Resistance at f = 50 to 1000 MHz, IF = 3mA
at f = 50 to 1000 MHz, IF = 10mA
Capacitance at VR = 1V, f = 1MHz at VR = 3V, f = 1MHz
Series Inductance across Case
BA682 BA683 BA682 BA683
BA682 BA683
Symbol Min.
VF -
IR -
rf rf rf rf -.