41C16257

IS41C16257 IS41LV16257 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE FEATURES Fast access and cycle time TTL compatible inputs and outputs Refresh Interval: 512 cycles/8 ms Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden JEDEC standard pinout Single power supply: -- 5V ± 10% (IS41C16257) -- 3.3V ± 10% (IS41LV16257) Byte Write and Byte Read operation via two CAS Industrial temperature available ISSI MAY 1999 ® DESCRIPTION The ISSI IS41C16257 and the IS41LV16257 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes these devices ideal for use in 16- and 32-bit wide data bus systems. These features make the IS41C16257 and the IS41LV16257 ideally suited for high band-width graphics, digital signal processing, high-performance computing systems, and peripheral applications. The IS41C16257 and the IS41LV16257 are packaged in a 40-pin, 400-mil SOJ and TSOP (Type II). KEY TIMING PARAMETERS Parameter Max. RAS Access Time (tRAC) Max. CAS Access Time (tCAC) Max. Column Address Access Time (tAA) Min. Fast Page Mode Cycle Time (tPC) Min. Read/Write Cycle Time (tRC) -35 35 10 18 12 60 -60 60 15 30 25 110 Unit ns ns ns ns ns ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible p...