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4AK18

Hitachi Semiconductor

Silicon N-Channel Power MOS FET Array


Description
4AK18 Silicon N-Channel Power MOS FET Array Application High speed power switching Features Low on-resistance R DS(on) ≤ 0.38 , VGS = 10 V, I D = 1 A R DS(on) ≤ 0.53 , VGS = 4 V, I D = 1 A Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for motor driver, solenoid driver and lamp driver 4AK18 Outl...



Hitachi Semiconductor

4AK18

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