4AK19

4AK19 Silicon N Channel MOS FET High Speed Power Switching ADE-208-727 (Z) 1st. Edition February 1999 Features Low on-resistance N Channel: R DS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2.5 A R DS(on) ≤ 0.6 Ω, VGS = 4 V, ID = 2.5 A 4 V gate drive devices. High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1 S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain 4AK19 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 devices poeration Symbol VDSS VGSS ID I D(pulse) I DR Pch(Tc = 25°C) Pch Tch Tstg Note2 Note2 Note1 Ratings 120 ±20 5 10 5 28 3.5 150 –55 to +150 Unit V V A A A W W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 120 ±20 — — 1.0 — — 3 — — — — — — — — — — Typ — — — — — 0.3 0.35 5 25 140 3 2.5 0.3 0.45 6.6 1.4 1.1 600 Max — — 100 ±10 2.0 0.5 0.6 — — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF kΩ µs µs µs µs V ns I F = 5 A, VGS = 0 I F = 5 A, VGS = 0 diF/ dt = 50A/ µs Test Conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VDS = 100 V, VGS = 0 VGS = ±16 V, VDS = 0 I D = 1 mA, VDS = 10 V I D = 2.5 A, VGS = 10 V Note3 I D = 2.5 A, VGS = 4 V Note3 I D = 2.5 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz VDS = 0, VGS = 0, f = 1 MHz VGS = 10 V, ID = 2.5 A RL = 12 Ω Drain to s...