Silicon N-Channel Power MOS FET Array
4AK25
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(o...
Description
4AK25
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
Low on-resistance R DS(on) 0.45 , VGS = 10 V, I D = 1 A Low drive current High speed switching High density mounting
Outline
SP-10
3 D 4 G 2G
5 D 6 G
7 D 8 G
9 D
12 34 56 78 9 10
1S
S 10
1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain
4AK25
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 Devices operation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25°C)* Pch* Tch Tstg
2 2 1
Ratings 60 ±20 1.5 4.5 1.5 24 3.6 150 –55 to +150
Unit V V A A A W W °C °C
2
4AK25
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 ±20 — — 1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 0.9 — — — — — — — — — Typ — — — — — 0.35 0.47 1.5 140 70 20 3 12 50 30 1.1 70 Max — — ±10 250 2.0 0.45 0.65 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V µs I F =...
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