Silicon N-Channel Power MOS FET Array
4AK26
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(o...
Description
4AK26
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
Low on-resistance R DS(on) ≤ 0.06 , VGS = 10 V, I D = 5 A R DS(on) ≤ 0.075 , VGS = 4 V, I D = 5 A Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for motor driver and solenoid driver and lamp driver
Outline
SP-12
12 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D
34
56 78 9 10 1112
S 3
S 6
S 7
S 10
1, 5, 8, 12. Gate 2, 4, 9, 11. Drain 3, 6, 7, 10. Source
4AK26
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 Devices operation Symbol VDSS VGSS ID I D(pulse)* I DR Pch (Tc = 25°C)* Pch* Tch Tstg
2 2 1
Ratings 60 ±20 10 32 10 28 4 150 –55 to +150
Unit V V A A A W W °C °C
2
4AK26
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 ±20 — — 1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 10 — — — — — — — — — Typ — —...
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