4AM11

4AM11 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features Low on-resistance N-channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –2.5 A Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for H-bridged motor driver 4AM11 Outline Absolute Maximum Ratings (Ta = 25°C) (1 Unit) Rating Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 4 Devices operation Symbol VDSS VGSS ID ID(pulse)*1 IDR Nch 60 ±20 5 20 5 Pch –60 ±20 –5 –20 –5 Unit V V A A A W W °C °C Pch (Tc = 25°C)*2 28 Pch*2 Tch Tstg 4 150 –55 to +150 2 4AM11 Electrical Characteristics (Ta = 25°C) (1 Unit) N channel Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Symbol Min Typ — — — — — 0.13 Max — — ±10 250 2.0 0.17 P channel Min –60 ±20 — — –1.0 — Typ — — — — — 0.15 Max — — ±10 Unit V V µA Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 2.5 A, VGS = 10 V*1 0.18 0.24 — 0.20 0.27 Ω ID = 2.5 A, VGS = 4 V*1 ID = 2.5 A, VDS = 10 V*1 Ciss Coss Crss td(on) tr td(off) tf VDF trr — — — — — — — — — 400...