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4N29 Dataheets PDF



Part Number 4N29
Manufacturers Motorola Inc
Logo Motorola  Inc
Description 6-Pin DIP Optoisolators
Datasheet 4N29 Datasheet4N29 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 4N29/D 6-Pin DIP Optoisolators Darlington Output The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This series is designed for use in applications requiring high collector output currents at lower input currents. • Higher Sensitivity to Low Input Drive Current • Meets or Exceeds All JEDEC Registered Specificati.

  4N29   4N29


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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 4N29/D 6-Pin DIP Optoisolators Darlington Output The 4N29/A, 4N30, 4N31, 4N32(1) and 4N33(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This series is designed for use in applications requiring high collector output currents at lower input currents. • Higher Sensitivity to Low Input Drive Current • Meets or Exceeds All JEDEC Registered Specifications • To order devices that are tested and marked per VDE 0884 requirements, the suffix “V” must be included at end of part number. VDE 0884 is a test option. Applications • Low Power Logic Circuits • Interfacing and coupling systems of different potentials and impedances • Telecommunications Equipment • Portable Electronics • Solid State Relays MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating INPUT LED Reverse Voltage Forward Current — Continuous LED Power Dissipation @ TA = 25°C Derate above 25°C OUTPUT DETECTOR Collector–Emitter Voltage Emitter–Collector Voltage Collector–Base Voltage Collector Current — Continuous Detector Power Dissipation @ TA = 25°C Derate above 25°C TOTAL DEVICE Isolation Surge Voltage(2) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range(3) Storage Temperature Range(3) Soldering Temperature (10 sec, 1/16″ from case) VISO PD TA Tstg TL 7500 250 2.94 – 55 to +100 – 55 to +150 260 Vac(pk) mW mW/°C °C °C °C VCEO VECO VCBO IC PD 30 5 30 150 150 1.76 Volts Volts Volts mA mW mW/°C VR IF PD 3 60 120 1.41 Volts mA mW mW/°C Symbol Value Unit GlobalOptoisolator™ 4N29 4N29A 4N30 * 4N31 4N32 * 4N33 * [CTR = 100% Min] [CTR = 50% Min] [CTR = 500% Min] *Motorola Preferred Devices STYLE 1 PLASTIC 6 1 STANDARD THRU HOLE CASE 730A–04 SCHEMATIC 1 2 3 PIN 1. 2. 3. 4. 5. 6. LED ANODE LED CATHODE N.C. EMITTER COLLECTOR BASE 6 5 4 1. Difference in 4N32 and 4N33 is JEDEC Registration for VISO only. All Motorola 6–Pin devices exceed JEDEC specification and are 7500 Vac(pk). The same applies for 4N29 and 4N30. 2. Isolation surge voltage is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 3. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions. Preferred devices are Motorola recommended choices for future use and best overall value. GlobalOptoisolator is a trademark of Motorola, Inc. REV 4 Motorola Optoelectronics Device Data © Motorola, Inc. 1995 1 4N29 4N29A 4N30 4N31 4N32 4N33 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1) Characteristic INPUT LED *Reverse Leakage Current (VR = 3 V, RL = 1 M ohms) *Forward Voltage (IF = 10 mA) Capacitance (VR = 0 V, f = 1 MHz) OUTPUT DETECTOR (TA = 25°C and IF = 0, unless otherwise noted) *Collector–Emitter Dark Current (VCE = 10 V, Base Open) *Collector–Base Breakdown Voltage (IC = 100 µA, IE = 0) *Collector–Emitter Breakdown Voltage (IC = 100 µA, IB = 0) *Emitter–Collector Breakdown Voltage (IE = 100 µA, IB = 0) DC Current Gain (VCE = 5 V, IC = 500 µA) COUPLED (TA = 25°C unless otherwise noted) *Collector Output Current (3) 4N32, 4N33 (VCE = 10 V, IF = 10 mA) 4N29, 4N30 4N31 Isolation Surge Voltage(4,5) (60 Hz ac Peak, 1 Second) Isolation Resistance(4) (V = 500 V) *Collector–Emitter Saturation Voltage(3) (IC = 2 mA, IF = 8 mA) Isolation Capacitance(4) (V = 0 V, f = 1 MHz) Turn–On Time(6) (IC = 50 mA, IF = 200 mA, VCC = 10 V) Turn–Off Time(6) (IC = 50 mA, IF = 200 mA, VCC = 10 V) 4N29, 30, 31 4N32, 33 4N31 4N29, 4N30, 4N32, 4N33 4N29/A, 4N30, 31, 32, 33 *4N29, 4N32 *4N30, 4N31, 4N33 ICEO Symbol Min Typ(1) Max Unit µA Volts pF IR VF C — — — 0.05 1.34 1.8 100 1.5 — — 30 30 5 — — — — — 16K 100 — — — — nA Volts Volts Volts — V(BR)CBO V(BR)CEO V(BR)ECO hFE IC (CTR)(2) 50 (500) 10 (100) 5 (50) 7500 2500 1500 — — — — — — — — — — — 1011 — — 0.2 0.6 — — — — — — — 1.2 1 — 5 mA (%) VISO Vac(pk) RISO VCE(sat) CISO ton toff Ohms Volts pF µs µs — — 17 45 40 100 * Indicates JEDEC Registered Data. All Motorola 6–pin devices have VISO rating of 7500 Vac(pk). 1. Always design to the specified minimum/maximum electrical limits (where applicable). 2. Current Transfer Ratio (CTR) = IC/IF x 100%. 3. Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%. 4. For this test, Pins 1 and 2 are common and Pins 4, 5 and 6 are common. 5. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating. 6. For test circuit setup and waveforms, refer to Figure 11. p 2 Motorola Optoelectronics Device Data 4N29 4N29A 4N30 4N31 4N32 4N33 TYPICAL CHARACTERISTICS 2 VF, FORWARD VOLTAGE (VOLTS) 1.8 PULSE ONLY PULSE OR DC I C , OUTPUT COLLECTOR CURRENT (NORMALIZED) 10 NORMALIZED TO: IF = 10 mA TA = 25°C 1 1.6 1.4 TA = –55°C 25°C 100°C 1 10 100 IF, LED FORWARD CURRENT (mA) 1000 1.2 1 0.1 TA = –55°C THRU +25°C +70°C +100°C 0.01 0.5 1 2 5 10 20 50.


4N28A 4N29 4N29


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