MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 4N35/D
GlobalOptoisolator™
6-Pin DIP Optoisolators Tran...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 4N35/D
GlobalOptoisolator™
6-Pin DIP Optoisolators
Transistor Output
The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photo
transistor detector. Current Transfer Ratio — 100% Minimum @ Specified Conditions Guaranteed Switching Speeds Meets or Exceeds all JEDEC Registered Specifications To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option. Applications General Purpose Switching Circuits Interfacing and coupling systems of different potentials and impedances Regulation Feedback Circuits Monitor & Detection Circuits Solid State Relays MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating INPUT LED Reverse Voltage Forward Current — Continuous LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C OUTPUT
TRANSISTOR Collector–Emitter Voltage Emitter–Base Voltage Collector–Base Voltage Collector Current — Continuous Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C TOTAL DEVICE Isolation Source Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range(2) Storage Temperature Range(2) Soldering Temperature (10 sec, 1/16″ from case) VISO PD TA Tstg TL 7500 25...