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4N37 Dataheets PDF



Part Number 4N37
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description PHOTO TRANSISTOR
Datasheet 4N37 Datasheet4N37 Datasheet (PDF)

4N35,4N36,4N37(Short) TOSHIBA Photocoupler GaAs IRed & Photo−Transistor 4N35(Short), 4N36(Short), 4N37(Short) AC Line / Digital Logic Isolator. Digital Logic / Digital Logic Isolator. Telephone Line Receiver. High Frequency Power Supply Feedback Control. Relay Contact Monitor. The TOSHIBA 4N35 (short) through 4N37 (short) consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in−line package. · Switching speeds: 3µs (typ.) · DC current transfer r.

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4N35,4N36,4N37(Short) TOSHIBA Photocoupler GaAs IRed & Photo−Transistor 4N35(Short), 4N36(Short), 4N37(Short) AC Line / Digital Logic Isolator. Digital Logic / Digital Logic Isolator. Telephone Line Receiver. High Frequency Power Supply Feedback Control. Relay Contact Monitor. The TOSHIBA 4N35 (short) through 4N37 (short) consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in−line package. · Switching speeds: 3µs (typ.) · DC current transfer ratio: 100% (min.) · Isolation resistance: 1011Ω (min.) · Isolation voltage: 2500Vrms (min.) · UL recognized: UL1577, file no. E67349 Unit in mm TOSHIBA Weight: 0.4 g 11−7A8 Pin Configurations(top view) 1 2002-09-25 4N35,4N36,4N37(Short) Maximum Ratings (Ta = 25°C) LED Detector Characteristic Symbol Rating Unit Forward current (continuous) Forward current derating Peak forward current Power dissipation Power dissipation derating Reverse voltage Collector-emitter voltage Collector-base voltage Emitter-collector voltage Collector current (continuous) Power dissipation Power dissipation derating Storage temperature Operating temperature Lead soldering temperature (at 10 s) Total package power dissipation Total package power dissipation derating Input to output isolation voltage (AC, 1 minute) (Note 1) 4N35 4N36 4N37 IF ∆IF/°C IPF PD ∆PD / °C VR BVCEO BVCBO BVECO IC PC ∆PC / °C Tstg Topr Tsol PT ∆PT / °C BVS BVS (**) 60 0.8 (*) 3 100 1.33 (*) 6 30 70 7 100 300 4.0 (*) -55~150 -55~100 260 300 mA mA / °C A mW mW / °C V V V V mA mW mW / °C °C °C °C mW 3.3 (*) mW / °C 2500 2500 / 3550 1750 / 2500 1050 / 1500 Vrms Vrms / Vpk (Note 1) Pulse width 1µs, 300pps (*) Above 25°C ambient. (**) JEDEC registered maximum BVS, however, TOSHIBA specifies a maxium BVS of 2500Vrms, 1 minute. Coupled 2 2002-09-25 4N35,4N36,4N37(Short) Electrical Characteristics (Ta = 25°C) LED Detector Characteristic Forward voltage Reverse current Capacitance DC forward current gain Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-collector breakdown voltage Collector dark current Collector dark current Collector-emitter capacitance Current transfer ratio Collector-emitter saturation voltage Capacitance input to output Isolation resistance Input to output isolation current (pulse width = 8ms) Turn-on time Turn-off time 4N35 4N36 4N37 Symbol Test Condition IF = 10 mA VF IF = 10 mA, Ta = -55°C IF = 10 mA, Ta = 100°C IR VR = 6 V CD V = 0, f = 1 MHz hFE VCE = 5V, IC = 500 µA V (BR) CEO IC = 10 mA V (BR) CBO IC = 100 µA V (BR) ECO IE = 100 µA ICEO ICEO VCE = 10 V VCE = 30 V, Ta = 100°C CCE IC / IF V = 0, f = 1 MHz IF = 10 mA, VCE = 10 V IF = 10 mA, VCE = 10 V Ta = -55°C IF = 10 mA, VCE = 10 V Ta = 100°C VCE (sat) IF = 10 mA, IC = 0.5 mA CS RS IIO tON tOFF VS = 0, f = 1 MHz VS = 500 V, R.H.≤ 60 % Vio = 3550 Vpk Vio = 2500 Vpk Vio = 1500 Vpk VCC = 10 V, IC = 2 mA RL = 100Ω Min. Typ. Max. Unit 0.8 1.15 1.5 0.9 ― 1.7 0.7 ― 1.4 ― ― 10 ― 30 100 ― 200 ― V µA pF ― 30 ― ― V 70 ― ― V 7 ―― V ― 1 50 nA ― ― 500 µA ― 10 ― pF 100 ― ― 40 ― ― % 40 ― ― ― 0.1 0.3 V ― 0.8 2.5 pF 1011 ― ― Ω ― ― 100 ― ― 100 µA ― ― 100 ― 3 10 µs ― 3 10 Coupled 3 2002-09-25 4N35,4N36,4N37(Short) 4 2002-09-25 4N35,4N36,4N37(Short) 5 2002-09-25 4N35,4N36,4N37(Short) 6 2002-09-25 4N35,4N36,4N37(Short) RESTRICTIONS ON PRODUCT USE 000707EBC · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safe.


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