4N38

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 4N38/D GlobalOptoisolator™ 6-Pin DIP Optoisolators Transistor Output The 4N38 and 4N38A(1) devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Guaranteed 80 Volt Collector–to–Emitter Breakdown ((BR)CEO)) Minimum Meets or Exceeds All JEDEC Registered Specifications To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option. Applications General Purpose Switching Circuits Interfacing and coupling systems of different potentials and impedances Monitor and Detection Circuits MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating INPUT LED Reverse Voltage Forward Current — Continuous Forward Current — Pk (PW = 300 µs, 2% duty cycle) LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C OUTPUT TRANSISTOR Collector–Emitter Voltage Emitter–Collector Voltage Collector–Base Voltage Collector Current — Continuous Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C TOTAL DEVICE Isolation Surge Voltage(2) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range(3) Storage Temperature Range(3) Soldering Temperature (10 sec, 1/16″ from case) 1. 1. 2. 1. 3. VISO PD TA Tstg TL 7500 250 2.9...