Document
Bulletin I2401 rev. A 07/00
50RIA SERIES
MEDIUM POWER THYRISTORS Features
High current rating Excellent dynamic characteristics dv/dt = 1000V/µs option Superior surge capabilities Standard package Metric threads version available Types up to 1600V V DRM / V RRM
Stud Version
50 A
Typical Applications
Phase control applications in converters Lighting circuits Battery charges Regulated power supplies and temperature and speed control circuit Can be supplied to meet stringent military, aerospace and other high-reliability requirements
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(RMS) ITSM
2
10 to 120
50 94 80
50RIA 140 to 160
50 90 80 1200 1257 7.21 6.58 1400 to 1600 110
Units
A °C A A A KA2s KA2s V µs °C
@ 50Hz @ 60Hz
1430 1490 10.18 9.30 100 to 1200
I t
@ 50Hz @ 60Hz
V DRM/V RRM tq TJ typical
- 40 to 125
Case Style TO-208AC (TO-65)
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50RIA Series
Bulletin I2401 rev. A 07/00
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
10 20 40 60 50RIA 80 100 120 140 160
V DRM /V RRM , max. repetitive peak and off-state voltage (1) V
100 200 400 600 800 1000 1200 1400 1600
VRSM , maximum nonrepetitive peak voltage (2) V
150 300 500 700 900 1100 1300 1500 1700
I DRM /I RRM max.
@ TJ = TJ max.
mA
15
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs (2) For voltage pulses with tp ≤ 5ms
On-state Conduction
Parameter
IT(AV) IT(RMS) ITSM Max. average on-state current @ Case temperature Max. RMS on-state current Max. peak, one-cycle non-repetitive surge current
50RIA 10 to 120
50 94 80 1430 1490 1200 1255
140 to 160
50 90 80 1200 1257 1010 1057 7.21 6.58 5.10 4.65 72.1 1.02 1.17 4.78 3.97 1.78
Units
A °C A A
Conditions
180° sinusoidal conduction
t = 10ms t = 8.3ms t = 10ms t = 8.3ms
No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max.
I2t
Maximum I2t for fusing
10.18 9.30 7.20 6.56
KA2 s
t = 10ms t = 8.3ms t = 10ms t = 8.3ms
I2√t VT(TO)1
Maximum I2√t for fusing Low level value of threshold voltage
101.8 0.94 1.08 4.08 3.34 1.60 200 400
KA2√s V
t = 0.1 to 10ms, no voltage reapplied, TJ = TJ max. (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ max.
VT(TO)2 High level value of threshold voltage rt1 rt2 VTM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Max. on-state voltage Maximum holding current Latching current
mΩ
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ max.
V mA
Ipk= 157 A, TJ = 25°C TJ = 25°C. Anode supply 22V, resistive load, Initial IT = 2A Anode supply 6V, resistive load
2
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50RIA Series
Bulletin I2401 rev. A 07/00
Switching
Parameter
di/dt Max. rate of rise of turned-on current VDRM ≤ 600V VDRM ≤ 1600V td tq Typical delay time 200 100 0.9 µs Typical turn-off time 110 A/µs
50RIA
Units
Conditions
TC = 125°C, VDM = rated VDRM Gate pulse = 20V, 15Ω, tp = 6µs, tr = 0.1µs max. ITM = (2x rated di/dt) A TC = 25°C VDM = rated VDRM ITM = 10A dc resistive circuit Gate pulse = 10V, 15Ω source, tp = 20µs TC = 125°C, ITM = 50A, reapplied dv/dt = 20V/µs dir/dt = -10A/µs, VR=50V
Blocking
Parameter
dv/dt Max. critical rate of rise of off-state voltage
50RIA
200 500 (*)
Units Conditions
V/µs TJ = TJ max. linear to 100% rated VDRM TJ = TJ max. linear to 67% rated VDRM
(*) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. 50RIA160S90.
Triggering
Parameter
PGM IGM +VGM -VGM IGT Maximum peak gate power PG(AV) Maximum average gate power Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage DC gate current required to trigger 10 250 100 50 VGT DC gate voltage required to trigger IGD VGD DC gate current not to trigger DC gate voltage not to trigger 3.5 2.5 5.0 0.2 V mA V mA TJ = - 40°C TJ = 25°C TJ = 125°C TJ = - 40°C TJ = 25°C Max. gate current/ voltage not to TJ = TJ max VDRM = rated voltage trigger is the max. value which will not trigger any unit with rated TJ = TJ max VDRM anode-to-cathode applied 20 V
50RIA
10 2.5 2.5
Units Conditions
W A TJ = TJ max, t p ≤ 5ms
Max. required gate trigger current/voltage are the lowest value which will trigger all units 6V anode-to-cathode applied
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50RIA Series
Bulletin I2401 rev. A 07/00
Thermal and Mechanical Specification
Parameter
TJ Tstg Max. operating temperature range Max. storage temperature range
50RIA
- 40 to 125 - 40 to 125 0.35
Units Conditions
°C °C K/W DC operation
RthJC Max. thermal resistance, junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque Min. Max. wt Approximate weight Case style
0.25
K/W
Mounting surface, smooth, flat and greased
2.8 (25) 3.4 (30) 28 (1.0)
Nm (lbf-in) g (oz)
Non-lubricated threads
TO-208AC (TO-65)
See Outline Table
∆RthJC Conduction
(The follow.