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HVR518

EIC discrete Semiconductors

HIGH VOLTAGE RECTIFIER DIODES

HVR512 - HVR520 PRV : 1200 - 2000 Volts Io : 5.0 Amperes FEATURES : * * * * * High current capability High surge current...


EIC discrete Semiconductors

HVR518

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HVR512 - HVR520 PRV : 1200 - 2000 Volts Io : 5.0 Amperes FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop HIGH VOLTAGE RECTIFIER DIODES DO-201AD 0.21 (5.33) 0.19 (4.82) 1.00 (25.4) MIN. 0.375 (9.52) 0.285 (7.24) MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 1.21 grams 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at I F = 5.0 Amps. Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25°C Ta = 100°C Ta = 50°C SYMBOL HVR512 HVR514 HVR516 HVR518 HVR520 VRRM VRMS VDC IF(AV) 1200 840 1200 1400 980 1400 1600 1120 1600 5.0 1800 1260 1800 2000 1400 2000 UNIT Volts Volts Volts Amps. IFSM VF IR IR(H) Cj RθJA TJ T STG 200 2.2 10 100 36 26 - 40 to + 150 - 40 to + 150 Amps. Volts µA µA pF °C...




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