DatasheetsPDF.com

HVU350B

Hitachi Semiconductor

Variable Capacitance Diode for VCO

HVU350B Variable Capacitance Diode for VCO ADE-208-430A(Z) Rev 1 Nov. 1998 Features • • • • High capacitance ratio. (n ...


Hitachi Semiconductor

HVU350B

File Download Download HVU350B Datasheet


Description
HVU350B Variable Capacitance Diode for VCO ADE-208-430A(Z) Rev 1 Nov. 1998 Features High capacitance ratio. (n =2.8 min) Low series resistance. (rs=0.5Ωmax). Good C-V linearity. Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HVU350B Laser Mark B0 Package Code URP Outline Cathode mark Mark 1 B0 2 1. Cathode 2. Anode HVU350B Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 -55 to +125 Unit V °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Symbol I R1 I R2 Capacitance C1 C4 Capacitance ratio Series resistance n rs Min — — 15.5 5.0 2.8 — Typ — — — — — — Max 10 100 17.0 6.0 — 0.5 — Ω pF Unit nA Test Condition VR = 15V VR = 15V, Ta = 60 °C VR = 1V, f = 1 MHz VR = 4V, f = 1 MHz C1/ C4 VR = 1V, f = 470 MHz 2 HVU350B Main Characteristic 10-6 10 -7 30 f=1MHz 25 Reverse current I R (A) 10 10 10 10 Capacitance C (pF) 4 8 12 16 20 -8 20 -9 15 -10 -11 10 10 10 -12 5 -13 0 0 -1 10 1.0 Reverse voltage V R (V) 10 Reverse voltage V R (V) Fig.1 Reverse current Vs. Reverse voltage Fig.2 Capacitance Vs. Reverse voltage 0.5 f=470MHz 0.4 0 Series resistance rs ( Ω) LF =∆(LogC)/∆(LogVR ) -0.5 0.3 0.2 -1.0 0.1 0 0.5 1.0 10 30 -1.5 10-1 1.0 Reverse voltage V R (V) 10 Reverse voltage V R (V) Fig.3 Series resistance Vs. Reverse voltage Fig.4 Linearity factor Vs. Reverse voltage 3 HVU350B Package ...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)