HY62KF08802B-DD

HY62KF08802B Series 1Mx8bit full CMOS SRAM Document Title 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Jan.19.2002 Preliminary This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.00 / Jan.02 Hynix Semiconductor HY62KF08802B Series DESCRIPTION The HY62KF08802B is a high speed, super low power and 8Mbit full CMOS SRAM organized as 1M words by 8bits. The HY62KF08802B uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V. FEATURES Fully static operation and Tri-state output TTL compatible inputs and outputs Battery backup -. 1.2V(min) data retention Standard pin configuration -. 44pin 400mil TSOP-II (Forward) Product No. HY62KF08802B-I Voltage (V) 2.7~3.6 Speed (ns) 55/70 Operation Current/Icc(mA) 2 Standby Current(uA) SL LL 12 30 Temperature (°C) -40~85 Note 1. I : Industrial 2. Current value is max. PIN CONNECTION BLOCK DIAGRAM ROW DECODER A4 A3 A2 A1 A0 /CS1 NC NC I/O1 I/O2 Vcc Vss I/O3 I/O4 NC NC /WE A19 A18 A17 A16 A15 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 1...