Document
HY62V8200B Series
256Kx8bit CMOS SRAM
Document Title
256K x8 bit 3.3V Low Power CMOS slow SRAM
Revision History
Revision No 03 History Initial Revision History Insert Revised - Improved operating current Icc1 : 60mA -> 35mA Change the Notch Location of sTSOP - Left-Top => Left-Center Marking Information Add Revised - AC Test Condition Add : 5pF Test Load Changed Logo - HYUNDAI -> hynix - Marking Information Change Draft Date Jul.29.2000 Remark Final
04
Sep.04.2000
Final
05
Dec.04.2000
Final
06
Apr.30.2001
Final
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 06 / Apr. 2001 Hynix Semiconductor
Y62V8200B Series
DESCRIPTION
The HY62V8200B is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62V8200B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particularly well suited for used in high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 2.0V.
FEATURES
Fully static operation and Tri-state output TTL compatible inputs and outputs Battery backup( LL-part ) -. 2.0V(min) data retention Standard pin configuration -. 32-sTSOPI-8X13.4, 32-TSOPI -8X20 (Standard and Reversed)
Product Voltage Speed Operation No. (V) (ns) Current/Icc(mA) HY62V8200B 3.0~3.6 70/85/100 5 HY62V8200B-E 3.0~3.6 70/85/100 5 HY62V8200B-I 3.0~3.6 70/85/100 5 Note 1. Blank : Commercial, E : Extended, I : Industrial 2. Current value is max.
Standby Current(uA) 25 25 25
Temperature (°C) 0~70 -25~85(E) -40~85(I)
PIN CONNECTION
A11 A9 A8 A13 /WE CS2 A15 Vcc A17 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 /OE A10 /CS1 DQ8 DQ7 DQ6 DQ5 DQ4 Vss DQ3 DQ2 DQ1 A0 A1 A2 A3 A11 A9 A8 A13 /WE CS2 A15 Vcc A17 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 /OE A10 /CS1 DQ8 DQ7 DQ6 DQ5 DQ4 Vss DQ3 DQ2 DQ1 A0 A1 A2 A3
TSOP-I (Standard)
sTSOP-I (Standard)
PIN DESCRIPTION Pin Name /CS1 CS2 /WE /OE A0 ~ A17 I/O1 ~ I/O8 Vcc Vss Pin Function Chip Select 1 Chip Select 2 Write Enable Output Enable Address Input Data Input/Output Power(3.0V~3.6V) Ground
BLOCK DIAGRAM
A0 ROW DECODER SENSE AMP ADD INPUT BUFFER
I/O1
COLUMNDECODER
DATA I/O BUFFER
MEMORY ARRAY 256K x 8
WRITE DRIVER
A17
I/O8
/CS1 CS2 /WE /OE
CONTROL LOGIC
Rev 06 / Apr. 2001
2
Y62V8200B Series
ORDERING INFORMATION Part No. Speed Power Temp. HY62V8200BLLT1 70/85/100 LL-part HY62V8200BLLR1 70/85/100 LL-part HY62V8200BLLST 70/85/100 LL-part HY62V8200BLLSR 70/85/100 LL-part HY62V8200BLLT1-E 70/85/100 LL-part E HY62V8200BLLR1-E 70/85/100 LL-part E HY62V8200BLLST-E 70/85/100 LL-part E HY62V8200BLLSR-E 70/85/100 LL-part E HY62V8200BLLT1-I 70/85/100 LL-part I HY62V8200BLLR1-I 70/85/100 LL-part I HY62V8200BLLST-I 70/85/100 LL-part I HY62V8200BLLSR-I 70/85/100 LL-part I Note 1. Blank : Commercial, E : Extended, I : Industrial Package TSOPI(Standard) TSOPI(Reversed) Smaller TSOPI(Standard) Smaller TSOPI(Reversed) TSOPI(Standard) TSOPI(Reversed) Smaller TSOPI(Standard) Smaller TSOPI(Reversed) TSOPI(Standard) TSOPI(Reversed) Smaller TSOPI(Standard) Smaller TSOPI(Reversed)
ABSOLUTE MAXIMUM RATING (1) Symbol VIN, VOUT VCC TA Parameter Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Operating Temperature Rating -0.2 to 3.9 -0.2 to 4.0 0 to 70 -25 to 85 -40 to 85 -55 to 150 1.0 50 260 • 5 Unit V V °C °C °C °C W mA °C•sec Remark
HY62V8200B HY62V8200B-E HY62V8200B-I
TSTG Storage Temperature PD Power Dissipation IOUT Data Output Current TSOLDER Lead Soldering Temperature & Time Note 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE /CS1 H X L L L CS2 X L H H H /WE X X H H L /OE X X H L X Mode Deselected Deselected Output Disabled Read Write I/O High-Z High-Z High-Z Dout DIN Power Standby Standby Active Active Active
Note : 1. H=VIH, L=VIL, X=don't care(VIH or VIL)
Rev 06 / Apr. 2001
2
Y62V8200B Series
RECOMMENDED DC OPERATING CONDITION Symbol Vcc Vss VIH VIL Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Min. 3.0 0 2.2 -0.3(1) Typ. 3.3 0 Max. 3.6 0 Vcc+0.3 0.4 Unit V V V V
Note VIL = -1.5V for pulse width less than 30ns
DC ELCTRICAL CHARACTERISTICS Vcc= 3.0~3.6V, TA = 0°C to 70°C/ -25°C to 85°C (E)/ -40°C to 85°C (I), unless otherwise specified Sym. Parameter Test Condition Min. Typ. Max. ILI Input Leakage Current Vss.