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HY62V8200BLLSR Dataheets PDF



Part Number HY62V8200BLLSR
Manufacturers Hynix Semiconductor
Logo Hynix Semiconductor
Description HY62V8200B Series 256Kx8bit CMOS SRAM
Datasheet HY62V8200BLLSR DatasheetHY62V8200BLLSR Datasheet (PDF)

HY62V8200B Series 256Kx8bit CMOS SRAM Document Title 256K x8 bit 3.3V Low Power CMOS slow SRAM Revision History Revision No 03 History Initial Revision History Insert Revised - Improved operating current Icc1 : 60mA -> 35mA Change the Notch Location of sTSOP - Left-Top => Left-Center Marking Information Add Revised - AC Test Condition Add : 5pF Test Load Changed Logo - HYUNDAI -> hynix - Marking Information Change Draft Date Jul.29.2000 Remark Final 04 Sep.04.2000 Final 05 Dec.04.2000 Fi.

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Document
HY62V8200B Series 256Kx8bit CMOS SRAM Document Title 256K x8 bit 3.3V Low Power CMOS slow SRAM Revision History Revision No 03 History Initial Revision History Insert Revised - Improved operating current Icc1 : 60mA -> 35mA Change the Notch Location of sTSOP - Left-Top => Left-Center Marking Information Add Revised - AC Test Condition Add : 5pF Test Load Changed Logo - HYUNDAI -> hynix - Marking Information Change Draft Date Jul.29.2000 Remark Final 04 Sep.04.2000 Final 05 Dec.04.2000 Final 06 Apr.30.2001 Final This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 06 / Apr. 2001 Hynix Semiconductor Y62V8200B Series DESCRIPTION The HY62V8200B is a high speed, low power and 2M bit CMOS SRAM organized as 262,144 words by 8bit. The HY62V8200B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particularly well suited for used in high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 2.0V. FEATURES Fully static operation and Tri-state output TTL compatible inputs and outputs Battery backup( LL-part ) -. 2.0V(min) data retention Standard pin configuration -. 32-sTSOPI-8X13.4, 32-TSOPI -8X20 (Standard and Reversed) Product Voltage Speed Operation No. (V) (ns) Current/Icc(mA) HY62V8200B 3.0~3.6 70/85/100 5 HY62V8200B-E 3.0~3.6 70/85/100 5 HY62V8200B-I 3.0~3.6 70/85/100 5 Note 1. Blank : Commercial, E : Extended, I : Industrial 2. Current value is max. Standby Current(uA) 25 25 25 Temperature (°C) 0~70 -25~85(E) -40~85(I) PIN CONNECTION A11 A9 A8 A13 /WE CS2 A15 Vcc A17 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 /OE A10 /CS1 DQ8 DQ7 DQ6 DQ5 DQ4 Vss DQ3 DQ2 DQ1 A0 A1 A2 A3 A11 A9 A8 A13 /WE CS2 A15 Vcc A17 A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 /OE A10 /CS1 DQ8 DQ7 DQ6 DQ5 DQ4 Vss DQ3 DQ2 DQ1 A0 A1 A2 A3 TSOP-I (Standard) sTSOP-I (Standard) PIN DESCRIPTION Pin Name /CS1 CS2 /WE /OE A0 ~ A17 I/O1 ~ I/O8 Vcc Vss Pin Function Chip Select 1 Chip Select 2 Write Enable Output Enable Address Input Data Input/Output Power(3.0V~3.6V) Ground BLOCK DIAGRAM A0 ROW DECODER SENSE AMP ADD INPUT BUFFER I/O1 COLUMNDECODER DATA I/O BUFFER MEMORY ARRAY 256K x 8 WRITE DRIVER A17 I/O8 /CS1 CS2 /WE /OE CONTROL LOGIC Rev 06 / Apr. 2001 2 Y62V8200B Series ORDERING INFORMATION Part No. Speed Power Temp. HY62V8200BLLT1 70/85/100 LL-part HY62V8200BLLR1 70/85/100 LL-part HY62V8200BLLST 70/85/100 LL-part HY62V8200BLLSR 70/85/100 LL-part HY62V8200BLLT1-E 70/85/100 LL-part E HY62V8200BLLR1-E 70/85/100 LL-part E HY62V8200BLLST-E 70/85/100 LL-part E HY62V8200BLLSR-E 70/85/100 LL-part E HY62V8200BLLT1-I 70/85/100 LL-part I HY62V8200BLLR1-I 70/85/100 LL-part I HY62V8200BLLST-I 70/85/100 LL-part I HY62V8200BLLSR-I 70/85/100 LL-part I Note 1. Blank : Commercial, E : Extended, I : Industrial Package TSOPI(Standard) TSOPI(Reversed) Smaller TSOPI(Standard) Smaller TSOPI(Reversed) TSOPI(Standard) TSOPI(Reversed) Smaller TSOPI(Standard) Smaller TSOPI(Reversed) TSOPI(Standard) TSOPI(Reversed) Smaller TSOPI(Standard) Smaller TSOPI(Reversed) ABSOLUTE MAXIMUM RATING (1) Symbol VIN, VOUT VCC TA Parameter Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Operating Temperature Rating -0.2 to 3.9 -0.2 to 4.0 0 to 70 -25 to 85 -40 to 85 -55 to 150 1.0 50 260 • 5 Unit V V °C °C °C °C W mA °C•sec Remark HY62V8200B HY62V8200B-E HY62V8200B-I TSTG Storage Temperature PD Power Dissipation IOUT Data Output Current TSOLDER Lead Soldering Temperature & Time Note 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability. TRUTH TABLE /CS1 H X L L L CS2 X L H H H /WE X X H H L /OE X X H L X Mode Deselected Deselected Output Disabled Read Write I/O High-Z High-Z High-Z Dout DIN Power Standby Standby Active Active Active Note : 1. H=VIH, L=VIL, X=don't care(VIH or VIL) Rev 06 / Apr. 2001 2 Y62V8200B Series RECOMMENDED DC OPERATING CONDITION Symbol Vcc Vss VIH VIL Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Min. 3.0 0 2.2 -0.3(1) Typ. 3.3 0 Max. 3.6 0 Vcc+0.3 0.4 Unit V V V V Note VIL = -1.5V for pulse width less than 30ns DC ELCTRICAL CHARACTERISTICS Vcc= 3.0~3.6V, TA = 0°C to 70°C/ -25°C to 85°C (E)/ -40°C to 85°C (I), unless otherwise specified Sym. Parameter Test Condition Min. Typ. Max. ILI Input Leakage Current Vss.


HY62V8200BLLR1-I HY62V8200BLLSR HY62V8200BLLSR-E


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