EM639165

EtronTech EM639165 8M x 16 bit Synchronous DRAM (SDRAM) Advanced (Rev. 2.3, Dec. /2013) Features Fast access time from clock: 4.5/5/5.4 ns Fast clock rate: 200/166/143 MHz Fully synchronous operation Internal pipelined architecture 2M word x 16-bit x 4-bank Programmable Mode registers - CAS Latency: 2, or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential or Interleaved - Burst stop function Auto Refresh and Self Refresh 4096 refresh cycles/64ms CKE power down mode Single +3.3V ± 0.3V power supply Industrial Temperature: -40~85°C Interface: LVTTL 54-pin 400 mil plastic TSOP II package - Pb free and Halogen free 54-ball 8.0 x 8.0 x 1.2mm (max) FBGA package - Pb free and Halogen free Overview The EM639165 SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. The EM639165 provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initi...