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2SC4511 Dataheets PDF



Part Number 2SC4511
Manufacturers Sanken electric
Logo Sanken electric
Description NPN TRANSISTOR
Datasheet 2SC4511 Datasheet2SC4511 Datasheet (PDF)

2SC4511 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1725) Application : Audio and General Purpose sAbsolute maximum ratings Symbol Ratings VCBO 120 VCEO 80 VEBO 6 IC 6 IB 3 PC 30(Tc=25°C) Tj 150 Tstg –55 to +150 (Ta=25°C) Unit V V V A A W °C °C sElectrical Characteristics (Ta=25°C) Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=120V VEB=6V IC=25mA VCE=4V, IC=2A IC=2A, IB=0.2A VCE=12V, IE=–0.5A VCB=10V, f=1MHz Ratings 10max 10max 8.

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2SC4511 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1725) Application : Audio and General Purpose sAbsolute maximum ratings Symbol Ratings VCBO 120 VCEO 80 VEBO 6 IC 6 IB 3 PC 30(Tc=25°C) Tj 150 Tstg –55 to +150 (Ta=25°C) Unit V V V A A W °C °C sElectrical Characteristics (Ta=25°C) Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=120V VEB=6V IC=25mA VCE=4V, IC=2A IC=2A, IB=0.2A VCE=12V, IE=–0.5A VCB=10V, f=1MHz Ratings 10max 10max 80min 50min∗ 0.5max 20typ 110typ Unit µA µA V V MHz pF ∗hFE Rank O(50 to100), P(70 to140), Y(90 to180) sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (V) (Ω) (A) (V) (V) (A) 30 10 3 10 –5 0.3 IB2 (A) –0.3 ton (µs) 0.16typ tstg (µs) 2.60typ tf (µs) 0.34typ External Dimensions FM20(TO220F) 10.1±0.2 4.2±0.2 2.8 c0.5 4.0±0.2 16.9±0.3 8.4±0.2 ø3.3±0.2 a b 3.9 ±0.2 0.8±0.2 13.0min 1.35±0.15 1.35±0.15 2.54 0.85 +0.2 -0.1 2.54 0.45 +0.2 -0.1 2.2±0.2 2.4±0.2 Weight : Approx 2.0g BCE a. Part No. b. Lot No. Collector Current IC(A) I C– V CE Characteristics (Typical) 6 200mA 150mA 100mA 80mA 5 50mA 4 3 30mA 2 20mA IB=10mA 1 0 0 1 2 3 4 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage VCE(sat)(V) V CE( s a t ) – I B Characteristics (Typical) 3 I C– V BE Temperature Characteristics (Typical) (VCE=4V) 6 Collector Current IC(A) 215˚25C˚(CC(aCsaeseTeTmepm)p) –30˚C (Case Temp) 2 4 1 2 IC=6A 4A 2A 0 0 0 0.5 1.0 1.5 0 1 2 Base Current IB(A) Base-Emittor Voltage VBE(V) Transient Thermal Resistance θ j-a( ˚ C / W ) h FE– I C Characteristics (Typical) (VCE=4V) 300 h FE– I C Temperature Characteristics (Typical) 200 125˚C (VCE=4V) θ j-a– t Characteristics 5 DC Current Gain hFE 100 50 30 0.02 100 Typ 50 0.1 0.5 1 Collector Current IC(A) 20 56 0.02 25˚C –30˚C 0.1 0.5 1 Collector Current IC(A) 1 0.5 0.4 56 1 10 100 Time t(ms) 1000 2000 Cut-off Frequency fT(MHZ) f T– I E Characteristics (Typical) (VCE=12V) 40 30 Typ 20 10 0 –0.02 –0.1 –1 –6 Emitter Current IE(A) Collector Current IC(A) Safe Operating Area (Single Pulse) 20 10 10ms 5 DC 100ms 1 0.5 0.1 0.05 3 Without Heatsink Natural Cooling 5 10 50 100 Collector-Emitter Voltage VCE(V) Maximum Power Dissipation PC(W) Pc–Ta Derating 30 heatsink ith Infinite W 20 10 Without Heatsink 2 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 111 DC Current Gain hFE .


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