2SC4512
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1726) sAbsolute maximum ratings (Ta=25°C)
S...
2SC4512
Silicon
NPN Triple Diffused Planar
Transistor (Complement to type 2SA1726) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4512 120 80 6 6 3 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C) 2SC4512 10max 10max 80min 50min 0.5max 20typ 110typ V MHz pF
12.0min
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB ∗hFE Rank Conditions VCB=120V VEB=6V IC=25mA VCE=4V, IC=2A IC=5A, IB=0.2A VCE=12V, IE=–0.5A VCB=10V, f=1MHz
External Dimensions MT-25(TO220)
3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1
Unit
µA µA
16.0±0.7
V
8.8±0.2
a b
ø3.75±0.2
O(50 to100), P(70 to140), Y(90 to180)
2.5 B C E
4.0max
1.35
0.65 +0.2 -0.1 2.5 1.4
sTypical Switching Characteristics (Common Emitter)
VCC (V) 30 RL (Ω) 10 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.3 IB2 (A) –0.3 ton (µs) 0.16typ tstg (µs) 2.60typ tf (µs) 0.34typ
Weight : Approx 2.6g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
0m A
15 0m A
1 m 00 A
A 80m
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V ) 3
I C – V BE Temperature Characteristics (Typical)
6 (V CE =4V)
6
20
Collector Current I C (A)
50 mA
Collector Current I C (A)
4
2
4
30mA
Cas e Te mp (Cas e Tem ) p)
I C =6A 4A 2A 0 0 0.5 1.0 1.5 0 0
0
0
1
2
3
4
–30˚C
25˚C
125
I B =10mA
˚C (
(Case
2
20mA
1
2
1 Base-Emittor Voltage V B E (V)
Temp
)
2
Collector-Emitter Voltage V C E (V)...