2SC4517

2SC4517/4517A Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Unit V V V A A W °C °C Application : Switching Regulator and General Purpose (Ta=25°C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=–0.25A VCB=10V, f=1MHz External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 Symbol 2SC4517 2SC4517A VCBO VCEO VEBO IC IB PC Tj Tstg 900 550 7 3(Pulse6) 1.5 30(Tc=25°C) 150 –55 to +150 1000 2SC4517 2SC4517A 100max 100max 550min 10 to 30 0.5max 1.2max 6typ 35typ Unit µA V V 13.0min 16.9±0.3 8.4±0.2 µA V MHz pF 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL (Ω) 250 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.15 IB2 (A) –0.45 ton (µs) 0.7max tstg (µs) 4max tf (µs) 0.5max 2.54 3.9 B C E ±0.2 I C – V CE Characteristics (Typical) 3 40 0m A V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) Base-Emitter Saturation Voltage V B E (s at) (V ) 1.5 I C /I B =5 Const. I C – V BE Temperature Characteristics (Typical) 3 (V C E =4V) 300mA 200 mA Collector Current I C (A) 150 mA 2 100m A Collector Current I C (A) 1.0 V B E (sat) 2 1 I B =40mA 0.5 1 V C E (sat) 0 0.03 0.05 0.1 0.5 1 5 0 0 0.2 0.4 0.6 0.8 1.0 ...