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2SC4537

Hitachi Semiconductor

NPN TRANSISTOR

2SC4537 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline CMPAK 3 1 2 1. Emitter 2. Base 3. C...


Hitachi Semiconductor

2SC4537

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2SC4537 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4537 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 11 2 50 100 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Note: Marking is “IS–”. Symbol V(BR)CBO I CBO I CEO I EBO hFE Cob fT PG NF Min 15 — — — 50 — 4.5 — — Typ — — — — 120 1.0 6.0 10 1.6 Max — 1 1 1 250 1.5 — — — Unit V µA µA µA — pF GHz dB dB Test conditions I C = 10 µA, IE = 0 VCB = 12 V, IE = 0 VCE = 10 V, IE = ∞ VEB = 1 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz 2 2SC4537 Maximum Collector Dissipation Curve Collector Power Dissipation Pc (mW) 150 Collector Current IC (mA) Typical Output Characteristics 20 Pulse 150 125 100 16 100 12 75 8 50 50 4 IB = 25 µA 0 50 100 150 Ambient Temperature Ta (°C) 0 2 4 6 8 10 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 200 VCE = 5 V Gain Bandwid...




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