Document
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4539
Power Amplifier Applications Power Switching Applications
2SC4539
Unit: mm
· Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 700 mA) · High speed switching time: tstg = 0.3 µs (typ.) · Small flat package · PC = 1.0 to 2.0 W (mounted on ceramic substrate) · Complementary to 2SA1743
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation
Collector power dissipation
VCBO VCEO VEBO
IC IB PC PC
(Note)
50 30 6 1.2 0.3 500
1000
Junction temperature Storage temperature range
Tj 150 Tstg −55 to 150
Note: Mounted on ceramic substrate (250 mm2 × 0.8 t)
Unit
V V V A A mW
mW
°C °C
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
1 2002-08-13
2SC4539
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance
Symbol
Test Condition
ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat)
fT Cob
VCB = 50 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 100 mA VCE = 2 V, IC = 1.0 A IC = 700 mA, IB = 35 mA IC = 700 mA, IB = 35 mA VCE = 2 V, IC = 100 mA VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
― ― 0.1 µA
― ― 0.1 µA
30 ― ―
V
120 ― 400
40 ― ―
― ― 0.5 V
―
― 1.2
V
― 100 ― MHz
― 10 ― pF
Turn-on time
Switching time
Storage time
Fall time
ton OUTPUT ― 0.1 ― 20 µs INPUT IB1
20 Ω
tstg
IB1
IB2 IB2
14 V
― 0.3
―
µs
IB1 = −IB2 = 35 mA, tf DUTY CYCLE ≤ 1%
― 0.1
―
Marking
Type name
KB
2 2002-08-13
Collector current IC (A)
10 1.0 0.8
IC – VCE
8 6
Common emitter Ta = 25°C
4
0.6 3
2 0.4
IB = 1 mA 0.2
0 0 0 2 4 6 8 10
Collector-emitter voltage VCE (V)
VCE (sat) – IC
10 Common emitter
3 IC/IB = 20
1
0.3
0.1 0.03 0.01
1
Ta = 100°C
25 -25
3 10 30 100 300 1000 3000
Collector current IC (mA)
Base-emitter saturation voltage VBE (sat) (V)
DC current gain hFE
2SC4539
1000 300
hFE – IC
Ta = 100°C
100 25
-25 30
10
3 Common emitter VCE = 2 V
1 1 3 10 30 100 300 1000 3000
Collector current IC (mA)
VBE (sat) – IC
100 Common emitter
30 IC/IB = 20
10
3 1 0. 3 0. 1 1
Ta = -25°C
25 100
3 10 30 100 300 1000 3000 Collector current IC (mA)
Collector-emitter saturation voltage VCE (sat) (V)
3 2002-08-13
Collector current IC (A)
IC – VBE
1.2 Common emitter
Ta = 25°C 1.0
0.8
0.6 Ta = 100°C
0.4
25 -25
0.2
0 0 2 4 6 8 10
Base-emitter voltage VBE (V)
1.4
1.2 (1)
1.0
PC – Ta
(1) Mounted on ceramic substrate (250 mm2 ´ 0.8 t)
(2) No heat sink
0.8
0.6 (2) 0.4
0.2
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
Collector current IC (A)
2SC4539
Safe Operating Area
10
5 3 IC max (pulse)*
IC max (continuous) 1
*t =1 ms *10 ms *100 ms
0.5
0.3 **:
DC operation Ta = 25°C
40 ´ 50 ´ 0.8 t
**: DC operation
0.1
Ta = 25°C 250 mm2 ´ 0.8 t
**: DC operation
0.05 Ta = 25°C
0.03 *: Single nonrepetitive pulse Ta = 25°C
**: Mounted on ceramic substrate
0.01
Curves must be derated linearly with increase in
temperature
0.005
0.1 0.3
1
3
10
VCEO max
30 100
Collector-emitter voltage VCE (V)
Collector power dissipation PC (W)
4 2002-08-13
2SC4539
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instrum.