2SC4563

Ordering number:EN4728 PNP Epitaxial Planar Silicon Transistor 2SC4563 Ultrahigh-Definition CRT Display Video Output Applications Features · High fT : fT=1.2GHz typ. · High breakdown voltage : VCEO≥80V. · High current : IC=500mA. · Small reverse transfer capacitance : Cre=3.8pF (VCB=30V). · Adoption of FBET process. Package Dimensions unit:mm 2010C [2SC4411] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 18.0 5.6 1.2 0.8 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C 2.55 Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Symbol Conditions ICBO IEBO hFE1 hFE2 fT VCE(sat) VBE(sat) VCB=80V, IE=0 VEB=2V, IC=0 VCE=10V, IC=50mA VCE=10V, IC=500mA VCE=10V, IC=100mA IC=300mA, IB=30mA IC=300mA, IB=30mA 2.55 2.7 14.0 1 : Base 0.4 2 : Collector 3 : Emitter JEDEC : TO-220AB EIAJ : SC-46 Ratings 100 80 3 500 1.0 1.3 10 150 –55 to +150 Unit V V V mA A W W ˚C ˚C Ratings min typ 30 20 1.2 max 0.1 5.0 200 0.6 1.2 Unit µA µA GHz V V Any and all SANYO products described or contained herein do not have specifications that can handle applications that requ...