2SC458K

2SC458(K) Silicon NPN Epitaxial Application Low frequency amplifier Medium speed switching Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458 (K) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 30 30 5 100 –100 200 150 –55 to +150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 30 5 — — 1 Typ — — — — — — — — — — 80 300 260 Max — — — 0.5 1.0 500 0.4 1.0 — 4 — — — Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 18 V, IE = 0 VEB = 4 V, IC = 0 VCE = 1 V, IC = 10 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Turn on time Turn off time Storage time Note: B 100 to 200 V(BR)EBO I CBO I EBO hFE* 100 — — 100 — — — — VCE(sat) VBE(sat) fT Cob t on t off t stg V V MHz pF ns ns ns I C = 10 mA, IB = 1 mA I C = 10 mA, IB = 1 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz I C = 10 IB1 = –10 IB2 = 10 mA, VCC = 10 V I C = IB1 = –IB2 = 20 mA, VCC = 5 V 1. The 2SC458 (K) is grouped b...