2SC4596E

2SC4596E GENERAL DESCRIPTION SILICON EPITAXIAL PLANNAR TRANSISTOR High frequency, high power NPN transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA SYMBOL TO-220F CONDITIONS VBE = 0V MIN MAX 100 60 5 25 1.5 1.5 0.5 UNIT V V A A W V V s VCESM VCEO IC ICM Ptot VCEsat VBE tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Emitter forward voltage Fall time Tmb 25 IC = 2A; IB = 0.2A IE = 2A IC=2A,IB1=-IB2=0.2A,VCC=30V - LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Collector current (DC) Base current (DC) Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0V MIN -55 - Tmb 25 MAX 100 60 5 5 1 25 150 150 UNIT V V V A A W ELECTRICAL CHARACTERISTICS SYMBOL ICBO IEBO V(BR)CEO VCEsat hFE fT Cc ton ts tf PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltages DC current gain Transition frequency at f = 30MHz Collector capacitance at f = 1MHz On times Tum-off storage time Fall time CONDITIONS VCB=100V VEB=5V IC=1mA IC =2A; IB = 0.2A IC =1A; VCE = 5V IC =0.5A; VCE = 10V VCB = 10V IC=2A,IB1=-IB2=0.2A,VCC=30V IC=2A,IB1=-IB2=0...